Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell
The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2012-03, Vol.48 (3), p.367-374 |
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| container_title | IEEE journal of quantum electronics |
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| creator | Kuo, Yen-Kuang Chang, Jih-Yuan Shih, Ya-Hsuan |
| description | The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail. |
| doi_str_mv | 10.1109/JQE.2011.2181972 |
| format | Article |
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The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. 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The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.</description><subject>Absorption</subject><subject>Doping</subject><subject>Electrostatics</subject><subject>Gallium nitride</subject><subject>Indium</subject><subject>Nitrogen compounds</subject><subject>Photovoltaic cells</subject><subject>PIN photodiodes</subject><subject>polarization</subject><issn>0018-9197</issn><issn>1558-1713</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9UE1rGzEQFaWBuknugV50bKGyNVrth47F2I5DcF2SnJfZ3VG9Zb0yWjng_qn-xWrtkMs85uO9NzzG7kBOAaSZPfxaTJUEmCoowOTqA5tAmhYCckg-somUUAgTF5_Y52H4E1utCzlh_zbHPfm2xo4_hWNz4s7ysCO-sJbqMIztPQXyTqz7CBZrGr7zrevQt38xtK7n8x363-MU-yaK0EGsPDbU8DOjwxP5qNOfZbc7F9yr6wK2Nd96dyAfWjrbfJXxqW98GR34CjezdR8rP4hW9Pxp9ONz6robdmWxG-j2Da_Zy3LxPL8Xjz9X6_mPR1GrLAmiynWWUEUGNZgMtMmIVCqTStfKFrrReYpoMqsqCyotoK4UGZOhKopMY-ReM3nRrb0bBk-2PPh2j_5UgizHwMsYeDkGXr4FHilfLpSWiN7PMwCVyzz5D6QgfD0</recordid><startdate>20120301</startdate><enddate>20120301</enddate><creator>Kuo, Yen-Kuang</creator><creator>Chang, Jih-Yuan</creator><creator>Shih, Ya-Hsuan</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120301</creationdate><title>Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell</title><author>Kuo, Yen-Kuang ; Chang, Jih-Yuan ; Shih, Ya-Hsuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-b7463ebe9a41961496ee2503b4c2f84d475aa96f2bf12581cb2e996a28864a463</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Absorption</topic><topic>Doping</topic><topic>Electrostatics</topic><topic>Gallium nitride</topic><topic>Indium</topic><topic>Nitrogen compounds</topic><topic>Photovoltaic cells</topic><topic>PIN photodiodes</topic><topic>polarization</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuo, Yen-Kuang</creatorcontrib><creatorcontrib>Chang, Jih-Yuan</creatorcontrib><creatorcontrib>Shih, Ya-Hsuan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE journal of quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kuo, Yen-Kuang</au><au>Chang, Jih-Yuan</au><au>Shih, Ya-Hsuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell</atitle><jtitle>IEEE journal of quantum electronics</jtitle><stitle>JQE</stitle><date>2012-03-01</date><risdate>2012</risdate><volume>48</volume><issue>3</issue><spage>367</spage><epage>374</epage><pages>367-374</pages><issn>0018-9197</issn><eissn>1558-1713</eissn><coden>IEJQA7</coden><abstract>The photovoltaic properties of (0001) face GaN/InGaN p-i-n solar cell are studied numerically. The simulation results show that the detrimental effects of hetero-interfaces and polarization charges will seriously degrade the solar cell performance, especially when the indium composition is high. If these effects are not eliminated or diminished, the photovoltaic properties would not be good enough for practical applications even if a high-quality crystal could be obtained. For this purpose, the step-graded interlayers between the GaN-InGaN interfaces are introduced in order to overcome both aforementioned critical effects. The impacts of the thickness and p-type doping concentration of the step-graded interlayers are also investigated in detail.</abstract><pub>IEEE</pub><doi>10.1109/JQE.2011.2181972</doi><tpages>8</tpages></addata></record> |
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| subjects | Absorption Doping Electrostatics Gallium nitride Indium Nitrogen compounds Photovoltaic cells PIN photodiodes polarization |
| title | Numerical Study of the Effects of Hetero-Interfaces, Polarization Charges, and Step-Graded Interlayers on the Photovoltaic Properties of (0001) Face GaN/InGaN p-i-n Solar Cell |
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