High-voltage management in single-supply CHE NOR-type flash memories

In a flash memory, a number of voltage levels different from V/sub DD/ are needed to perform the required operations (read, program, and erase) on the array cells. In the case of single-supply memory devices, voltages higher than V/sub DD/ as well as negative voltages, which are referred to as high...

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Veröffentlicht in:	Proceedings of the IEEE 2003-04, Vol.91 (4), p.554-568
Hauptverfasser:	Motta, I., Ragone, G., Khouri, O., Torelli, G., Micheloni, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Channel hot electron injection Channels Data storage Decoding Electric potential Flash memory Flash memory (computers) Hip Joining processes Logic programming Memory devices Memory management Multilevel Nonvolatile memory Standby generators Threshold voltage Voltage
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creator	Motta, I. Ragone, G. Khouri, O. Torelli, G. Micheloni, R.
description	In a flash memory, a number of voltage levels different from V/sub DD/ are needed to perform the required operations (read, program, and erase) on the array cells. In the case of single-supply memory devices, voltages higher than V/sub DD/ as well as negative voltages, which are referred to as high voltages (HVs), must be produced on-chip. This paper aims at giving the reader an overview of how HVs are generated and managed in single-supply NOR-type flash memories programmed by channel hot-electron injection. Both schemes used for conventional (i.e., bilevel) memory devices and schemes designed to meet multilevel memory requirements are addressed.
doi_str_mv	10.1109/JPROC.2003.811706
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subjects	Arrays Channel hot electron injection Channels Data storage Decoding Electric potential Flash memory Flash memory (computers) Hip Joining processes Logic programming Memory devices Memory management Multilevel Nonvolatile memory Standby generators Threshold voltage Voltage
title	High-voltage management in single-supply CHE NOR-type flash memories
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