Design Criteria for InGaAs/InP Single-Photon Avalanche Diode

We provide a detailed insight on the design of InGaAs/InP single-photon avalanche diode (SPAD) for 1.55- μm photon detection. In order to lower SPAD noise [the dark count rate (DCR)] without lowering photon detection efficiency (PDE) or increasing afterpulsing, it is important to optimize detector v...

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Veröffentlicht in:	IEEE photonics journal 2013-04, Vol.5 (2), p.6800209-6800209
Hauptverfasser:	Acerbi, F., Anti, M., Tosi, A., Zappa, F.
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption Avalanche photodiodes dark count detection efficiency Detectors Electric fields Indium gallium arsenide Indium phosphide InGaAs performance simulation photon counting Photonics single-photon avalanche diode (SPAD) Tunneling
Online-Zugang:	Volltext
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