Design Criteria for InGaAs/InP Single-Photon Avalanche Diode
We provide a detailed insight on the design of InGaAs/InP single-photon avalanche diode (SPAD) for 1.55- μm photon detection. In order to lower SPAD noise [the dark count rate (DCR)] without lowering photon detection efficiency (PDE) or increasing afterpulsing, it is important to optimize detector v...
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| Veröffentlicht in: | IEEE photonics journal 2013-04, Vol.5 (2), p.6800209-6800209 |
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| creator | Acerbi, F. Anti, M. Tosi, A. Zappa, F. |
| description | We provide a detailed insight on the design of InGaAs/InP single-photon avalanche diode (SPAD) for 1.55- μm photon detection. In order to lower SPAD noise [the dark count rate (DCR)] without lowering photon detection efficiency (PDE) or increasing afterpulsing, it is important to optimize detector vertical layer structure and diffusion profiles. We present simulations of SPAD structures with different models, including custom ones. We discuss the influences of multiplication region thickness and doping, absorption region thickness, and electric-field distribution on SPAD performance. Multiplication region thickness strongly affects tunneling generation, whereas a thicker absorption region gives higher absorption efficiency but reduces trigger efficiency. Their optimal values depend on InP and InGaAs material quality and on device operating conditions. We show how electric field within InGaAs must be chosen as a tradeoff between heterobarrier transit efficiency and carrier generation. |
| doi_str_mv | 10.1109/JPHOT.2013.2258664 |
| format | Article |
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In order to lower SPAD noise [the dark count rate (DCR)] without lowering photon detection efficiency (PDE) or increasing afterpulsing, it is important to optimize detector vertical layer structure and diffusion profiles. We present simulations of SPAD structures with different models, including custom ones. We discuss the influences of multiplication region thickness and doping, absorption region thickness, and electric-field distribution on SPAD performance. Multiplication region thickness strongly affects tunneling generation, whereas a thicker absorption region gives higher absorption efficiency but reduces trigger efficiency. Their optimal values depend on InP and InGaAs material quality and on device operating conditions. We show how electric field within InGaAs must be chosen as a tradeoff between heterobarrier transit efficiency and carrier generation.</description><identifier>ISSN: 1943-0655</identifier><identifier>EISSN: 1943-0647</identifier><identifier>DOI: 10.1109/JPHOT.2013.2258664</identifier><identifier>CODEN: PJHOC3</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Avalanche photodiodes ; dark count ; detection efficiency ; Detectors ; Electric fields ; Indium gallium arsenide ; Indium phosphide ; InGaAs ; performance simulation ; photon counting ; Photonics ; single-photon avalanche diode (SPAD) ; Tunneling</subject><ispartof>IEEE photonics journal, 2013-04, Vol.5 (2), p.6800209-6800209</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c377t-e4a8899edb3d1f832b2aaa8a09991099cffa95914ede1f6e760a99e82ffeb38c3</citedby><cites>FETCH-LOGICAL-c377t-e4a8899edb3d1f832b2aaa8a09991099cffa95914ede1f6e760a99e82ffeb38c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6504460$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,860,2096,27612,27903,27904,54911</link.rule.ids></links><search><creatorcontrib>Acerbi, F.</creatorcontrib><creatorcontrib>Anti, M.</creatorcontrib><creatorcontrib>Tosi, A.</creatorcontrib><creatorcontrib>Zappa, F.</creatorcontrib><title>Design Criteria for InGaAs/InP Single-Photon Avalanche Diode</title><title>IEEE photonics journal</title><addtitle>JPHOT</addtitle><description>We provide a detailed insight on the design of InGaAs/InP single-photon avalanche diode (SPAD) for 1.55- μm photon detection. In order to lower SPAD noise [the dark count rate (DCR)] without lowering photon detection efficiency (PDE) or increasing afterpulsing, it is important to optimize detector vertical layer structure and diffusion profiles. We present simulations of SPAD structures with different models, including custom ones. We discuss the influences of multiplication region thickness and doping, absorption region thickness, and electric-field distribution on SPAD performance. Multiplication region thickness strongly affects tunneling generation, whereas a thicker absorption region gives higher absorption efficiency but reduces trigger efficiency. Their optimal values depend on InP and InGaAs material quality and on device operating conditions. We show how electric field within InGaAs must be chosen as a tradeoff between heterobarrier transit efficiency and carrier generation.</description><subject>Absorption</subject><subject>Avalanche photodiodes</subject><subject>dark count</subject><subject>detection efficiency</subject><subject>Detectors</subject><subject>Electric fields</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>InGaAs</subject><subject>performance simulation</subject><subject>photon counting</subject><subject>Photonics</subject><subject>single-photon avalanche diode (SPAD)</subject><subject>Tunneling</subject><issn>1943-0655</issn><issn>1943-0647</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNo9kNtKw0AQhhdRsFZfQG_yAmn3nF3wprTaRgotWK-XSTLbbqmJbILg25se6NUMw_9_DB8hz4yOGKN2_LFerDYjTpkYca6M1vKGDJiVIqVaZrfXXal78tC2e0q1ZcoOyOsM27Ctk2kMHcYAiW9iktdzmLTjvF4nn6HeHjBd75quqZPJLxygLneYzEJT4SO583Bo8ekyh-Tr_W0zXaTL1TyfTpZpKbKsS1GCMdZiVYiKeSN4wQHAALXW9s_b0nuwyjKJFTKvMdMU-rjh3mMhTCmGJD9zqwb27ieGb4h_roHgTocmbh3ELpQHdLSS1IORlTZeGquMKioleSkYk9zqrGfxM6uMTdtG9Fceo-7o0p1cuqNLd3HZl17OpYCI14JWVEpNxT8VVG7B</recordid><startdate>20130401</startdate><enddate>20130401</enddate><creator>Acerbi, F.</creator><creator>Anti, M.</creator><creator>Tosi, A.</creator><creator>Zappa, F.</creator><general>IEEE</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>DOA</scope></search><sort><creationdate>20130401</creationdate><title>Design Criteria for InGaAs/InP Single-Photon Avalanche Diode</title><author>Acerbi, F. ; Anti, M. ; Tosi, A. ; Zappa, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-e4a8899edb3d1f832b2aaa8a09991099cffa95914ede1f6e760a99e82ffeb38c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Absorption</topic><topic>Avalanche photodiodes</topic><topic>dark count</topic><topic>detection efficiency</topic><topic>Detectors</topic><topic>Electric fields</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>InGaAs</topic><topic>performance simulation</topic><topic>photon counting</topic><topic>Photonics</topic><topic>single-photon avalanche diode (SPAD)</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Acerbi, F.</creatorcontrib><creatorcontrib>Anti, M.</creatorcontrib><creatorcontrib>Tosi, A.</creatorcontrib><creatorcontrib>Zappa, F.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE photonics journal</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Acerbi, F.</au><au>Anti, M.</au><au>Tosi, A.</au><au>Zappa, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design Criteria for InGaAs/InP Single-Photon Avalanche Diode</atitle><jtitle>IEEE photonics journal</jtitle><stitle>JPHOT</stitle><date>2013-04-01</date><risdate>2013</risdate><volume>5</volume><issue>2</issue><spage>6800209</spage><epage>6800209</epage><pages>6800209-6800209</pages><issn>1943-0655</issn><eissn>1943-0647</eissn><coden>PJHOC3</coden><abstract>We provide a detailed insight on the design of InGaAs/InP single-photon avalanche diode (SPAD) for 1.55- μm photon detection. In order to lower SPAD noise [the dark count rate (DCR)] without lowering photon detection efficiency (PDE) or increasing afterpulsing, it is important to optimize detector vertical layer structure and diffusion profiles. We present simulations of SPAD structures with different models, including custom ones. We discuss the influences of multiplication region thickness and doping, absorption region thickness, and electric-field distribution on SPAD performance. Multiplication region thickness strongly affects tunneling generation, whereas a thicker absorption region gives higher absorption efficiency but reduces trigger efficiency. Their optimal values depend on InP and InGaAs material quality and on device operating conditions. We show how electric field within InGaAs must be chosen as a tradeoff between heterobarrier transit efficiency and carrier generation.</abstract><pub>IEEE</pub><doi>10.1109/JPHOT.2013.2258664</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | Absorption Avalanche photodiodes dark count detection efficiency Detectors Electric fields Indium gallium arsenide Indium phosphide InGaAs performance simulation photon counting Photonics single-photon avalanche diode (SPAD) Tunneling |
| title | Design Criteria for InGaAs/InP Single-Photon Avalanche Diode |
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