Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum-Well Light-Emitting Diodes

The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier transport effect for efficiency droop suppression. The lattice-matched AlGaInN quaternary alloys with different compositions...

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Veröffentlicht in:	IEEE photonics journal 2013-04, Vol.5 (2), p.2201011-2201011
Hauptverfasser:	Guangyu Liu, Jing Zhang, Chee Keong Tan, Tansu, N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carrier processes Current density Efficiency droop Gallium nitride III-nitride InGaN quantum wells (QWs) internal quantum efficiency (IQE) Light emitting diodes light-emitting diodes (LEDs) Materials Metals Radiative recombination thin barrier design
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