Hot-Probe Method for Majority Charge Carrier Determination in Methylammonium Lead Halide Perovskites
Perovskites, due to their promising capabilities, are among the major candidates to substitute early-generation silicon solar cells. Despite their outstanding electrical and optical properties, actual comprehension of their behavior requires further studies and also investigation tools. It is shown...
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description | Perovskites, due to their promising capabilities, are among the major candidates to substitute early-generation silicon solar cells. Despite their outstanding electrical and optical properties, actual comprehension of their behavior requires further studies and also investigation tools. It is shown that vacancy traps in organic-inorganic perovskites induce different polarities, where lead and methylamine vacancies posses p- and n-type polarity, respectively. Referred to as the self-doping property, different molar ratios of chemical precursors lead to controllable polarity and intrinsic doping. In other reports, thermal annihilation is also shown to convert p-type perovskite to n-type. According to the broad range of synthesized perovskites and their current application and promising future in optoelectronic devices, a simple, quick, and dependable method for trap concentration and major carrier-type determination is essential. Hot probe is a simple, affordable, and fast method for extracting polarity type in bulk and thin-film semiconductors. So far, this method and its variations have been applied for measuring conductivity, polarity, and impurity concentration in diverse ranges of semiconductors. In this method, free carriers are generated by raising the temperature of hot-probe contact and induced diffusion from this contact toward the other cold contact is studied. An equilibrium state is reached as a result of the formed built-in electric field between the cold and hot electrodes and also temperature elevation of this cold electrode, which act as diffusion dampers. Here, different types of organic-inorganic perovskites are synthesized and their electrical behavior is evaluated by the hot-probe method. Finally, it is concluded that the hot-probe approach is a dependable, fast, and accurate method to be applied in the field of perovskite material evaluations. |
doi_str_mv | 10.1109/JPHOTOV.2020.3048249 |
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Despite their outstanding electrical and optical properties, actual comprehension of their behavior requires further studies and also investigation tools. It is shown that vacancy traps in organic-inorganic perovskites induce different polarities, where lead and methylamine vacancies posses p- and n-type polarity, respectively. Referred to as the self-doping property, different molar ratios of chemical precursors lead to controllable polarity and intrinsic doping. In other reports, thermal annihilation is also shown to convert p-type perovskite to n-type. According to the broad range of synthesized perovskites and their current application and promising future in optoelectronic devices, a simple, quick, and dependable method for trap concentration and major carrier-type determination is essential. Hot probe is a simple, affordable, and fast method for extracting polarity type in bulk and thin-film semiconductors. So far, this method and its variations have been applied for measuring conductivity, polarity, and impurity concentration in diverse ranges of semiconductors. In this method, free carriers are generated by raising the temperature of hot-probe contact and induced diffusion from this contact toward the other cold contact is studied. An equilibrium state is reached as a result of the formed built-in electric field between the cold and hot electrodes and also temperature elevation of this cold electrode, which act as diffusion dampers. Here, different types of organic-inorganic perovskites are synthesized and their electrical behavior is evaluated by the hot-probe method. Finally, it is concluded that the hot-probe approach is a dependable, fast, and accurate method to be applied in the field of perovskite material evaluations.</description><identifier>ISSN: 2156-3381</identifier><identifier>EISSN: 2156-3403</identifier><identifier>DOI: 10.1109/JPHOTOV.2020.3048249</identifier><identifier>CODEN: IJPEG8</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Carrier density ; Charge carrier ; Cold weather construction ; Current carriers ; Dampers ; Doping ; Electric contacts ; Electric fields ; Electrical resistivity ; Electrodes ; Evaluation ; hot probe ; Impurities ; Lead ; Lead compounds ; Metal halides ; Optical properties ; Optoelectronic devices ; perovskite ; Perovskites ; Photovoltaic cells ; Probes ; self-doping ; Semiconductor device measurement ; Semiconductors ; Solar cells ; Synthesis ; Temperature measurement ; Thin films ; Vacancies</subject><ispartof>IEEE journal of photovoltaics, 2021-03, Vol.11 (2), p.368-373</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c299t-76e4461646371cc0c7177d463f211fcc055ea414d41ef8506c1338256ce4e2073</citedby><cites>FETCH-LOGICAL-c299t-76e4461646371cc0c7177d463f211fcc055ea414d41ef8506c1338256ce4e2073</cites><orcidid>0000-0002-7835-8657 ; 0000-0003-3621-1267 ; 0000-0001-6961-8886 ; 0000-0002-6919-892X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9328504$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9328504$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fathi, Saeed</creatorcontrib><creatorcontrib>Bagherzadeh-khajehmarjan, Elnaz</creatorcontrib><creatorcontrib>Nikniazi, Arash</creatorcontrib><creatorcontrib>Olyaeefar, Babak</creatorcontrib><creatorcontrib>Ahmadi-kandjani, Sohrab</creatorcontrib><title>Hot-Probe Method for Majority Charge Carrier Determination in Methylammonium Lead Halide Perovskites</title><title>IEEE journal of photovoltaics</title><addtitle>JPHOTOV</addtitle><description>Perovskites, due to their promising capabilities, are among the major candidates to substitute early-generation silicon solar cells. Despite their outstanding electrical and optical properties, actual comprehension of their behavior requires further studies and also investigation tools. It is shown that vacancy traps in organic-inorganic perovskites induce different polarities, where lead and methylamine vacancies posses p- and n-type polarity, respectively. Referred to as the self-doping property, different molar ratios of chemical precursors lead to controllable polarity and intrinsic doping. In other reports, thermal annihilation is also shown to convert p-type perovskite to n-type. According to the broad range of synthesized perovskites and their current application and promising future in optoelectronic devices, a simple, quick, and dependable method for trap concentration and major carrier-type determination is essential. Hot probe is a simple, affordable, and fast method for extracting polarity type in bulk and thin-film semiconductors. So far, this method and its variations have been applied for measuring conductivity, polarity, and impurity concentration in diverse ranges of semiconductors. In this method, free carriers are generated by raising the temperature of hot-probe contact and induced diffusion from this contact toward the other cold contact is studied. An equilibrium state is reached as a result of the formed built-in electric field between the cold and hot electrodes and also temperature elevation of this cold electrode, which act as diffusion dampers. Here, different types of organic-inorganic perovskites are synthesized and their electrical behavior is evaluated by the hot-probe method. Finally, it is concluded that the hot-probe approach is a dependable, fast, and accurate method to be applied in the field of perovskite material evaluations.</description><subject>Carrier density</subject><subject>Charge carrier</subject><subject>Cold weather construction</subject><subject>Current carriers</subject><subject>Dampers</subject><subject>Doping</subject><subject>Electric contacts</subject><subject>Electric fields</subject><subject>Electrical resistivity</subject><subject>Electrodes</subject><subject>Evaluation</subject><subject>hot probe</subject><subject>Impurities</subject><subject>Lead</subject><subject>Lead compounds</subject><subject>Metal halides</subject><subject>Optical properties</subject><subject>Optoelectronic devices</subject><subject>perovskite</subject><subject>Perovskites</subject><subject>Photovoltaic cells</subject><subject>Probes</subject><subject>self-doping</subject><subject>Semiconductor device measurement</subject><subject>Semiconductors</subject><subject>Solar cells</subject><subject>Synthesis</subject><subject>Temperature measurement</subject><subject>Thin films</subject><subject>Vacancies</subject><issn>2156-3381</issn><issn>2156-3403</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMlOwzAQhi0EEhX0CeBgiXOKt9jJEZUloFbtoXC1TDKhLk1cbBepb49LC3OZRfPP8iF0TcmIUlLevsyr2WL2NmKEkREnomCiPEEDRnOZcUH46V_MC3qOhiGsSDJJcinFADWVi9ncu3fAU4hL1-DWeTw1K-dt3OHx0vgPwGPjvQWP7yGC72xvonU9tv2vZrc2Xed6u-3wBEyDK7O2DeA5ePcdPm2EcInOWrMOMDz6C_T6-LAYV9lk9vQ8vptkNSvLmCkJQkgqheSK1jWpFVWqSVnLKG1TIc_BCCoaQaEtciJrmp5iuaxBACOKX6Cbw9yNd19bCFGv3Nb3aaVOUFghiVJF6hKHrtq7EDy0euNtZ_xOU6L3SPURqd4j1UekSXZ1kFkA-JeUnKVLBP8BASRyIA</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>Fathi, Saeed</creator><creator>Bagherzadeh-khajehmarjan, Elnaz</creator><creator>Nikniazi, Arash</creator><creator>Olyaeefar, Babak</creator><creator>Ahmadi-kandjani, Sohrab</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Despite their outstanding electrical and optical properties, actual comprehension of their behavior requires further studies and also investigation tools. It is shown that vacancy traps in organic-inorganic perovskites induce different polarities, where lead and methylamine vacancies posses p- and n-type polarity, respectively. Referred to as the self-doping property, different molar ratios of chemical precursors lead to controllable polarity and intrinsic doping. In other reports, thermal annihilation is also shown to convert p-type perovskite to n-type. According to the broad range of synthesized perovskites and their current application and promising future in optoelectronic devices, a simple, quick, and dependable method for trap concentration and major carrier-type determination is essential. Hot probe is a simple, affordable, and fast method for extracting polarity type in bulk and thin-film semiconductors. So far, this method and its variations have been applied for measuring conductivity, polarity, and impurity concentration in diverse ranges of semiconductors. In this method, free carriers are generated by raising the temperature of hot-probe contact and induced diffusion from this contact toward the other cold contact is studied. An equilibrium state is reached as a result of the formed built-in electric field between the cold and hot electrodes and also temperature elevation of this cold electrode, which act as diffusion dampers. Here, different types of organic-inorganic perovskites are synthesized and their electrical behavior is evaluated by the hot-probe method. 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subjects | Carrier density Charge carrier Cold weather construction Current carriers Dampers Doping Electric contacts Electric fields Electrical resistivity Electrodes Evaluation hot probe Impurities Lead Lead compounds Metal halides Optical properties Optoelectronic devices perovskite Perovskites Photovoltaic cells Probes self-doping Semiconductor device measurement Semiconductors Solar cells Synthesis Temperature measurement Thin films Vacancies |
title | Hot-Probe Method for Majority Charge Carrier Determination in Methylammonium Lead Halide Perovskites |
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