Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers

This paper investigates the potential of three different methods-tabula rasa (TR), phosphorus diffusion gettering (PDG), and hydrogenation, for improving the carrier lifetime in n-type Czochralski-grown upgraded metallurgical-grade (UMG) silicon samples. Our results show that the lifetimes in the UM...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE journal of photovoltaics 2018-07, Vol.8 (4), p.990-996
Hauptverfasser:	Basnet, Rabin, Rougieux, Fiacre E., Sun, Chang, Phang, Sieu P., Samundsett, Chris, Einhaus, Roland, Degoulange, Julien, Macdonald, Daniel
Format:	Artikel
Sprache:	eng
Schlagworte:	Boron Charge carrier lifetime Czochralski (Cz) Diffusion processes Elemental semiconductors hydrogenation Phosphorus phosphorus diffusion gettering Photovoltaic cells Semiconductor growth Silicon tabula rasa upgraded metallurgical-grade (UMG) silicon
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!