Comparison of CIGS Solar Cells Made With Different Structures and Fabrication Techniques

Cu(In, Ga)Se2 (CIGS)-based solar cells from six fabricators were characterized and compared. The devices had differing substrates, absorber deposition processes, buffer materials, and contact materials. The effective bandgaps of devices varied from 1.05 to 1.22 eV, with the lowest optical bandgaps o...

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Veröffentlicht in:	IEEE journal of photovoltaics 2017-01, Vol.7 (1), p.286-293
Hauptverfasser:	Mansfield, Lorelle M., Garris, Rebekah L., Counts, Kahl D., Sites, James R., Thompson, Christopher P., Shafarman, William N., Ramanathan, Kannan
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorbers Auger electron spectroscopy (AES) Buffers capacitance characterization Copper indium gallium selenides correlation Cu(In Electric contacts Electric potential Electroluminescence Energy gap Fabrication Ga)Se<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 (CIGS Gallium internal quantum efficiency (IQE) Photoelectric effect Photonic band gap Photovoltaic cells Photovoltaic systems Physical properties Q factors Solar cells Substrates Sulfur thin-film photovoltaics Voltage Zinc
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