Numerical Simulation of Carrier-Selective Electron Contacts Featuring Tunnel Oxides

Recently, n-type Si solar cells featuring tunnel-oxide-passivated contacts have achieved remarkable conversion efficiencies of up to 24.9%. Different approaches concerning the doped Si layer, which can be amorphous, polycrystalline, or partially crystalline, have been presented over the past few yea...

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Veröffentlicht in:	IEEE journal of photovoltaics 2015-09, Vol.5 (5), p.1348-1356
Hauptverfasser:	Steinkemper, H., Feldmann, F., Bivour, M., Hermle, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Conductivity Doping Metals Numerical models Numerical simulation Photovoltaic cells semiconductor device modeling Silicon Tunneling
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