Investigation of Wide Process Temperature Window for Amorphous Silicon Suboxide Thin-Film Passivation Deposited by Inductively Coupled PECVD

Hydrogenated intrinsic amorphous silicon suboxide thin films deposited onto c-Si wafers by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma tool are studied. Compared with intrinsic amorphous silicon deposited in the same tool, this material display...

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Veröffentlicht in:	IEEE journal of photovoltaics 2015-05, Vol.5 (3), p.705-710
Hauptverfasser:	Jia Ge, Muzhi Tang, Wong, Johnson, Stangl, Rolf, Zhenhao Zhang, Dippell, Torsten, Doerr, Manfred, Hohn, Oliver, Huber, Marco, Wohlfart, Peter, Aberle, Armin G., Mueller, Thomas
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon Atomic layer deposition Defect passivation Epitaxial growth epitaxy heterojunction solar cell inductively coupled plasma (ICP) Passivation Plasma temperature process temperature window Temperature measurement
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