18% Efficiency IBC Cell With Rear-Surface Processed on Quartz
In order to relax the mechanical constraints of processing thin crystalline Si wafers into highly efficient solar cells, we propose a process sequence, where a significant part of the process is done on module level. The device structure is an interdigitated-back-contact cell with an amorphous silic...
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Veröffentlicht in: | IEEE journal of photovoltaics 2013-04, Vol.3 (2), p.684-689 |
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creator | Dross, F. O'Sullivan, B. Debucquoy, M. Bearda, T. Govaerts, J. Labie, R. Loozen, X. Granata, S. El Daif, O. Trompoukis, C. Van Nieuwenhuysen, K. Meuris, M. Gordon, I. Posthuma, N. Baert, K. Poortmans, J. Boulord, C. Beaucarne, G. |
description | In order to relax the mechanical constraints of processing thin crystalline Si wafers into highly efficient solar cells, we propose a process sequence, where a significant part of the process is done on module level. The device structure is an interdigitated-back-contact cell with an amorphous silicon back surface field. The record cell reaches an independently confirmed efficiency of 18.4%. Although the device deserves further optimization, the result shows the compatibility of processing on glass with efficiencies exceeding 18%, which opens the door to a high-efficiency solar cell process where the potentially thin wafer is attached to a foreign carrier during the full processing sequence. |
doi_str_mv | 10.1109/JPHOTOV.2013.2239359 |
format | Article |
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The device structure is an interdigitated-back-contact cell with an amorphous silicon back surface field. The record cell reaches an independently confirmed efficiency of 18.4%. Although the device deserves further optimization, the result shows the compatibility of processing on glass with efficiencies exceeding 18%, which opens the door to a high-efficiency solar cell process where the potentially thin wafer is attached to a foreign carrier during the full processing sequence.</description><subject>Crystalline-Si</subject><subject>Glass</subject><subject>Indium tin oxide</subject><subject>interdigitated-back-contact (IBC) cells</subject><subject>Metallization</subject><subject>Passivation</subject><subject>Photovoltaic cells</subject><subject>Silicon</subject><subject>superstrate processing</subject><issn>2156-3381</issn><issn>2156-3403</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1PAjEQhhujiQT5BXpoYjwudrYf2z140A0IhgRU1GNTutO4BFlsdw_464WAzuWdw_vMJA8hV8D6ACy_fZqNpvPpez9lwPtpynMu8xPSSUGqhAvGT_92ruGc9GJcst0oJpUSHXIH-oYOvK9chWu3peOHgha4WtGPqvmkL2hD8toGbx3SWagdxoglrdf0ubWh-bkgZ96uIvaO2SVvw8G8GCWT6eO4uJ8kjvO0SUBpnyvnrMxyq0B6LgFExssUUTuthQXrGObeA-pFVi5EKUvPoOROi9QK3iXXh7ubUH-3GBuzrNuw3r00kMlc6EzpfUscWi7UMQb0ZhOqLxu2BpjZuzJHV2bvyhxd7bDLA1Yh4j-ihMwEE_wXk4pjcQ</recordid><startdate>20130401</startdate><enddate>20130401</enddate><creator>Dross, F.</creator><creator>O'Sullivan, B.</creator><creator>Debucquoy, M.</creator><creator>Bearda, T.</creator><creator>Govaerts, J.</creator><creator>Labie, R.</creator><creator>Loozen, X.</creator><creator>Granata, S.</creator><creator>El Daif, O.</creator><creator>Trompoukis, C.</creator><creator>Van Nieuwenhuysen, K.</creator><creator>Meuris, M.</creator><creator>Gordon, I.</creator><creator>Posthuma, N.</creator><creator>Baert, K.</creator><creator>Poortmans, J.</creator><creator>Boulord, C.</creator><creator>Beaucarne, G.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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subjects | Crystalline-Si Glass Indium tin oxide interdigitated-back-contact (IBC) cells Metallization Passivation Photovoltaic cells Silicon superstrate processing |
title | 18% Efficiency IBC Cell With Rear-Surface Processed on Quartz |
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