Analyses of the Evolution of Iron-Silicide Precipitates in Multicrystalline Silicon During Solar Cell Processing

We simulate the precipitation of iron during the multicrystalline ingot crystallization process and the redistribution of iron during subsequent phosphorus diffusion gettering with a 2-D model. We compare the simulated size distribution of the precipitates with the X-ray fluorescence microscopy meas...

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Veröffentlicht in:	IEEE J. Photovolt 2013-01, Vol.3 (1), p.131-137
Hauptverfasser:	Schön, Jonas, Haarahiltunen, A., Savin, H., Fenning, D. P., Buonassisi, T., Warta, W., Schubert, M. C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cooling Crystallization Density measurement Gettering Grain boundaries impurities Iron semiconductor process modeling Size measurement
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