A Silicon Migration Model Incorporating Anisotropic Surface Energy and Non-Uniform Diffusivity

Silicon migration is a process that can produce seamless, single-crystal silicon cavities in a single mask layer, greatly simplifying process flows for forming various cavity- and channel-based structures. However, controlling the dimensions of the final cavity and membrane thickness is complex and...

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Veröffentlicht in:	Journal of microelectromechanical systems 2022-12, Vol.31 (6), p.943-950
Hauptverfasser:	Wong, Han Xuan, Lee, Joshua En-Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropic magnetoresistance Anisotropy Annealing cavities Chemicals High aspect ratio Holes level-set method Mathematical models Membranes Programming languages Silicon Silicon migration silicon-on-nothing Simulation Single crystals Smoothing methods Surface energy Surface treatment
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