High Modulation Depth Terahertz Modulator Based on Side-polished Terahertz Fiber
High modulation depth fiber-based modulators working at terahertz (THz) wavelength are of paramount importance for the application of THz communication technology by taking advantages of the low loss, high interference resistance and strong adaptability THz fiber network. Here, we demonstrate a THz...
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creator | Luo, Zhenyang Tian, Ziping Zhang, Zilong Wei, Longxiang Xie, Manyan Chen, Bingyu Wang, Xingfu Peng, Gangding Kong, Depeng Wei, Yuming Yang, Tiefeng Lu, Huihui Guan, Heyuan |
description | High modulation depth fiber-based modulators working at terahertz (THz) wavelength are of paramount importance for the application of THz communication technology by taking advantages of the low loss, high interference resistance and strong adaptability THz fiber network. Here, we demonstrate a THz modulator based on side-polished THz fiber combined with GaAs film/Au-nanoparticles (Au-Nps). The Au-Nps and the remaining thickness of the side-polishing are careful designed to achieve target resonance wavelengths. The side-polishing region of fiber provides a flat platform for integrating nanostructures to enhanced light-material interactions which greatly enhances the modulation performance. The experimental results show that this new fiber modulator can achieve the THz wave amplitude modulation under a relatively low irradiation of an external 808 nm laser, with a tunable frequency range of 0.366-1.093 THz and a maximum modulation depth of 99.24%. Besides, resonance frequency can be adjusted by changing the remaining thickness of the device. Moreover, the area of this modulator is only 9 mm2 which can be easily integrated into THz systems. Therefore, we believe our work will contribute to the developments of high-performance fiber-based THz modulator for applications in THz communication system. |
doi_str_mv | 10.1109/JLT.2024.3509575 |
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Here, we demonstrate a THz modulator based on side-polished THz fiber combined with GaAs film/Au-nanoparticles (Au-Nps). The Au-Nps and the remaining thickness of the side-polishing are careful designed to achieve target resonance wavelengths. The side-polishing region of fiber provides a flat platform for integrating nanostructures to enhanced light-material interactions which greatly enhances the modulation performance. The experimental results show that this new fiber modulator can achieve the THz wave amplitude modulation under a relatively low irradiation of an external 808 nm laser, with a tunable frequency range of 0.366-1.093 THz and a maximum modulation depth of 99.24%. Besides, resonance frequency can be adjusted by changing the remaining thickness of the device. Moreover, the area of this modulator is only 9 mm2 which can be easily integrated into THz systems. Therefore, we believe our work will contribute to the developments of high-performance fiber-based THz modulator for applications in THz communication system.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2024.3509575</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>IEEE</publisher><subject>Absorption ; Gallium arsenide ; high modulation depth ; Metals ; Modulation ; nanoparticles ; Optical fiber sensors ; Optical fibers ; Optical surface waves ; optically control ; Resonance ; Resonant frequency ; side-polished fiber ; Terahertz communications ; terahertz modulator</subject><ispartof>Journal of lightwave technology, 2024-11, p.1-9</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-3359-5517 ; 0000-0001-7450-6723 ; 0009-0005-4635-3105 ; 0009-0007-6589-7460 ; 0000-0002-8761-5723 ; 0000-0003-4827-672X ; 0000-0002-7203-9479 ; 0009-0004-8039-4261</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10772046$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10772046$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Luo, Zhenyang</creatorcontrib><creatorcontrib>Tian, Ziping</creatorcontrib><creatorcontrib>Zhang, Zilong</creatorcontrib><creatorcontrib>Wei, Longxiang</creatorcontrib><creatorcontrib>Xie, Manyan</creatorcontrib><creatorcontrib>Chen, Bingyu</creatorcontrib><creatorcontrib>Wang, Xingfu</creatorcontrib><creatorcontrib>Peng, Gangding</creatorcontrib><creatorcontrib>Kong, Depeng</creatorcontrib><creatorcontrib>Wei, Yuming</creatorcontrib><creatorcontrib>Yang, Tiefeng</creatorcontrib><creatorcontrib>Lu, Huihui</creatorcontrib><creatorcontrib>Guan, Heyuan</creatorcontrib><title>High Modulation Depth Terahertz Modulator Based on Side-polished Terahertz Fiber</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>High modulation depth fiber-based modulators working at terahertz (THz) wavelength are of paramount importance for the application of THz communication technology by taking advantages of the low loss, high interference resistance and strong adaptability THz fiber network. Here, we demonstrate a THz modulator based on side-polished THz fiber combined with GaAs film/Au-nanoparticles (Au-Nps). The Au-Nps and the remaining thickness of the side-polishing are careful designed to achieve target resonance wavelengths. The side-polishing region of fiber provides a flat platform for integrating nanostructures to enhanced light-material interactions which greatly enhances the modulation performance. The experimental results show that this new fiber modulator can achieve the THz wave amplitude modulation under a relatively low irradiation of an external 808 nm laser, with a tunable frequency range of 0.366-1.093 THz and a maximum modulation depth of 99.24%. Besides, resonance frequency can be adjusted by changing the remaining thickness of the device. Moreover, the area of this modulator is only 9 mm2 which can be easily integrated into THz systems. Therefore, we believe our work will contribute to the developments of high-performance fiber-based THz modulator for applications in THz communication system.</description><subject>Absorption</subject><subject>Gallium arsenide</subject><subject>high modulation depth</subject><subject>Metals</subject><subject>Modulation</subject><subject>nanoparticles</subject><subject>Optical fiber sensors</subject><subject>Optical fibers</subject><subject>Optical surface waves</subject><subject>optically control</subject><subject>Resonance</subject><subject>Resonant frequency</subject><subject>side-polished fiber</subject><subject>Terahertz communications</subject><subject>terahertz modulator</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpNkEFPhDAQhRujibh69-CBP8DambYUjrq6rgajidxJganUoJAWD_rrZbNr9DTJm--9w8fYOfAlAM8vH4pyiRzlUiieK60OWARKZQkiiEMWcS1EkmmUx-wkhDfOQcpMR-x54167-HFoP3szueEjvqFx6uKSvOnIT9-_r8HH1yZQG8_Ii2spGYfehW4O_tC1q8mfsiNr-kBn-7tg5fq2XG2S4unufnVVJE2KaUIaAdPa1DaTtm60lGCEwEa1dQ7CNpoyjpRZgUoqqFuuKKXGggKBqRatWDC-m238EIInW43evRv_VQGvtkKqWUi1FVLthcyVi13FEdE_XGvkMhU_DPJciw</recordid><startdate>20241129</startdate><enddate>20241129</enddate><creator>Luo, Zhenyang</creator><creator>Tian, Ziping</creator><creator>Zhang, Zilong</creator><creator>Wei, Longxiang</creator><creator>Xie, Manyan</creator><creator>Chen, Bingyu</creator><creator>Wang, Xingfu</creator><creator>Peng, Gangding</creator><creator>Kong, Depeng</creator><creator>Wei, Yuming</creator><creator>Yang, Tiefeng</creator><creator>Lu, Huihui</creator><creator>Guan, Heyuan</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-3359-5517</orcidid><orcidid>https://orcid.org/0000-0001-7450-6723</orcidid><orcidid>https://orcid.org/0009-0005-4635-3105</orcidid><orcidid>https://orcid.org/0009-0007-6589-7460</orcidid><orcidid>https://orcid.org/0000-0002-8761-5723</orcidid><orcidid>https://orcid.org/0000-0003-4827-672X</orcidid><orcidid>https://orcid.org/0000-0002-7203-9479</orcidid><orcidid>https://orcid.org/0009-0004-8039-4261</orcidid></search><sort><creationdate>20241129</creationdate><title>High Modulation Depth Terahertz Modulator Based on Side-polished Terahertz Fiber</title><author>Luo, Zhenyang ; Tian, Ziping ; Zhang, Zilong ; Wei, Longxiang ; Xie, Manyan ; Chen, Bingyu ; Wang, Xingfu ; Peng, Gangding ; Kong, Depeng ; Wei, Yuming ; Yang, Tiefeng ; Lu, Huihui ; Guan, Heyuan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c626-e72126babf84fbc7441a332c5db913fc7e802e8f325451bd05e6ecf15132673d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Absorption</topic><topic>Gallium arsenide</topic><topic>high modulation depth</topic><topic>Metals</topic><topic>Modulation</topic><topic>nanoparticles</topic><topic>Optical fiber sensors</topic><topic>Optical fibers</topic><topic>Optical surface waves</topic><topic>optically control</topic><topic>Resonance</topic><topic>Resonant frequency</topic><topic>side-polished fiber</topic><topic>Terahertz communications</topic><topic>terahertz modulator</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, Zhenyang</creatorcontrib><creatorcontrib>Tian, Ziping</creatorcontrib><creatorcontrib>Zhang, Zilong</creatorcontrib><creatorcontrib>Wei, Longxiang</creatorcontrib><creatorcontrib>Xie, Manyan</creatorcontrib><creatorcontrib>Chen, Bingyu</creatorcontrib><creatorcontrib>Wang, Xingfu</creatorcontrib><creatorcontrib>Peng, Gangding</creatorcontrib><creatorcontrib>Kong, Depeng</creatorcontrib><creatorcontrib>Wei, Yuming</creatorcontrib><creatorcontrib>Yang, Tiefeng</creatorcontrib><creatorcontrib>Lu, Huihui</creatorcontrib><creatorcontrib>Guan, Heyuan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Luo, Zhenyang</au><au>Tian, Ziping</au><au>Zhang, Zilong</au><au>Wei, Longxiang</au><au>Xie, Manyan</au><au>Chen, Bingyu</au><au>Wang, Xingfu</au><au>Peng, Gangding</au><au>Kong, Depeng</au><au>Wei, Yuming</au><au>Yang, Tiefeng</au><au>Lu, Huihui</au><au>Guan, Heyuan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Modulation Depth Terahertz Modulator Based on Side-polished Terahertz Fiber</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2024-11-29</date><risdate>2024</risdate><spage>1</spage><epage>9</epage><pages>1-9</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>High modulation depth fiber-based modulators working at terahertz (THz) wavelength are of paramount importance for the application of THz communication technology by taking advantages of the low loss, high interference resistance and strong adaptability THz fiber network. Here, we demonstrate a THz modulator based on side-polished THz fiber combined with GaAs film/Au-nanoparticles (Au-Nps). The Au-Nps and the remaining thickness of the side-polishing are careful designed to achieve target resonance wavelengths. The side-polishing region of fiber provides a flat platform for integrating nanostructures to enhanced light-material interactions which greatly enhances the modulation performance. The experimental results show that this new fiber modulator can achieve the THz wave amplitude modulation under a relatively low irradiation of an external 808 nm laser, with a tunable frequency range of 0.366-1.093 THz and a maximum modulation depth of 99.24%. Besides, resonance frequency can be adjusted by changing the remaining thickness of the device. Moreover, the area of this modulator is only 9 mm2 which can be easily integrated into THz systems. 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subjects | Absorption Gallium arsenide high modulation depth Metals Modulation nanoparticles Optical fiber sensors Optical fibers Optical surface waves optically control Resonance Resonant frequency side-polished fiber Terahertz communications terahertz modulator |
title | High Modulation Depth Terahertz Modulator Based on Side-polished Terahertz Fiber |
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