DC Electroluminescence Efficiency of Silicon Rich Silicon Oxide Light Emitting Capacitors
We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layer...
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| Veröffentlicht in: | Journal of lightwave technology 2013-09, Vol.31 (17), p.2913-2918 |
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| container_end_page | 2918 |
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| container_title | Journal of lightwave technology |
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| creator | Juvert, Joan Gonzalez Fernandez, Alfredo Abelardo Morales-Sanchez, Alfredo Barreto, Jorge Aceves, Mariano Llobera, Andreu Dominguez, Carlos |
| description | We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6±0.3)×10 -5 in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique. |
| doi_str_mv | 10.1109/JLT.2013.2276435 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_JLT_2013_2276435</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6574204</ieee_id><sourcerecordid>27834041</sourcerecordid><originalsourceid>FETCH-LOGICAL-c340t-7ca6bea1f4ba8b70996fa6fc5087ed332e5bcb526d868e132c57913b32a320ba3</originalsourceid><addsrcrecordid>eNo9kE1Lw0AQhhdRsFbvgpe9eEzd790cJcYvAgWtB09hd7rbrqRJyUaw_96Ulp5mhnmfYXgQuqVkRinJH96rxYwRymeMaSW4PEMTKqXJGKP8HE2I5jwzmolLdJXSDyFUCKMn6PupwGXjYei75ncTW5_At-BxGUKEOLY73AX8GZsIXYs_IqxPw_wvLj2u4mo94HIThyG2K1zYrYU4dH26RhfBNsnfHOsUfT2Xi-I1q-Yvb8VjlQEXZMg0WOW8pUE4a5wmea6CVQEkMdovOWdeOnCSqaVRxlPOQOqccseZ5Yw4y6eIHO5C36XU-1Bv-7ix_a6mpN6rqUc19V5NfVQzIvcHZGsT2Cb0toWYThzTZnxN0DF3d8hF7_1praQWjAj-D1jBbQ8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>DC Electroluminescence Efficiency of Silicon Rich Silicon Oxide Light Emitting Capacitors</title><source>IEEE Electronic Library (IEL)</source><creator>Juvert, Joan ; Gonzalez Fernandez, Alfredo Abelardo ; Morales-Sanchez, Alfredo ; Barreto, Jorge ; Aceves, Mariano ; Llobera, Andreu ; Dominguez, Carlos</creator><creatorcontrib>Juvert, Joan ; Gonzalez Fernandez, Alfredo Abelardo ; Morales-Sanchez, Alfredo ; Barreto, Jorge ; Aceves, Mariano ; Llobera, Andreu ; Dominguez, Carlos</creatorcontrib><description>We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6±0.3)×10 -5 in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2013.2276435</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Current density ; Detectors ; Electroluminescence ; electroluminescent devices ; Electronics ; Exact sciences and technology ; Fabrication ; Microelectronic fabrication (materials and surfaces technology) ; MIS devices ; nanoparticles ; nanostructured materials ; Optical variables measurement ; Optoelectronic devices ; Sea measurements ; semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Services and terminals of telecommunications ; Silicon ; silicon devices ; Systems, networks and services of telecommunications ; Telecommunications ; Telecommunications and information theory ; Telemetry. Remote supervision. Telewarning. Remote control</subject><ispartof>Journal of lightwave technology, 2013-09, Vol.31 (17), p.2913-2918</ispartof><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-7ca6bea1f4ba8b70996fa6fc5087ed332e5bcb526d868e132c57913b32a320ba3</citedby><cites>FETCH-LOGICAL-c340t-7ca6bea1f4ba8b70996fa6fc5087ed332e5bcb526d868e132c57913b32a320ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6574204$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6574204$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27834041$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Juvert, Joan</creatorcontrib><creatorcontrib>Gonzalez Fernandez, Alfredo Abelardo</creatorcontrib><creatorcontrib>Morales-Sanchez, Alfredo</creatorcontrib><creatorcontrib>Barreto, Jorge</creatorcontrib><creatorcontrib>Aceves, Mariano</creatorcontrib><creatorcontrib>Llobera, Andreu</creatorcontrib><creatorcontrib>Dominguez, Carlos</creatorcontrib><title>DC Electroluminescence Efficiency of Silicon Rich Silicon Oxide Light Emitting Capacitors</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6±0.3)×10 -5 in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique.</description><subject>Applied sciences</subject><subject>Current density</subject><subject>Detectors</subject><subject>Electroluminescence</subject><subject>electroluminescent devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fabrication</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>MIS devices</subject><subject>nanoparticles</subject><subject>nanostructured materials</subject><subject>Optical variables measurement</subject><subject>Optoelectronic devices</subject><subject>Sea measurements</subject><subject>semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Services and terminals of telecommunications</subject><subject>Silicon</subject><subject>silicon devices</subject><subject>Systems, networks and services of telecommunications</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>Telemetry. Remote supervision. Telewarning. Remote control</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kE1Lw0AQhhdRsFbvgpe9eEzd790cJcYvAgWtB09hd7rbrqRJyUaw_96Ulp5mhnmfYXgQuqVkRinJH96rxYwRymeMaSW4PEMTKqXJGKP8HE2I5jwzmolLdJXSDyFUCKMn6PupwGXjYei75ncTW5_At-BxGUKEOLY73AX8GZsIXYs_IqxPw_wvLj2u4mo94HIThyG2K1zYrYU4dH26RhfBNsnfHOsUfT2Xi-I1q-Yvb8VjlQEXZMg0WOW8pUE4a5wmea6CVQEkMdovOWdeOnCSqaVRxlPOQOqccseZ5Yw4y6eIHO5C36XU-1Bv-7ix_a6mpN6rqUc19V5NfVQzIvcHZGsT2Cb0toWYThzTZnxN0DF3d8hF7_1praQWjAj-D1jBbQ8</recordid><startdate>20130901</startdate><enddate>20130901</enddate><creator>Juvert, Joan</creator><creator>Gonzalez Fernandez, Alfredo Abelardo</creator><creator>Morales-Sanchez, Alfredo</creator><creator>Barreto, Jorge</creator><creator>Aceves, Mariano</creator><creator>Llobera, Andreu</creator><creator>Dominguez, Carlos</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20130901</creationdate><title>DC Electroluminescence Efficiency of Silicon Rich Silicon Oxide Light Emitting Capacitors</title><author>Juvert, Joan ; Gonzalez Fernandez, Alfredo Abelardo ; Morales-Sanchez, Alfredo ; Barreto, Jorge ; Aceves, Mariano ; Llobera, Andreu ; Dominguez, Carlos</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-7ca6bea1f4ba8b70996fa6fc5087ed332e5bcb526d868e132c57913b32a320ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Current density</topic><topic>Detectors</topic><topic>Electroluminescence</topic><topic>electroluminescent devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fabrication</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>MIS devices</topic><topic>nanoparticles</topic><topic>nanostructured materials</topic><topic>Optical variables measurement</topic><topic>Optoelectronic devices</topic><topic>Sea measurements</topic><topic>semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Services and terminals of telecommunications</topic><topic>Silicon</topic><topic>silicon devices</topic><topic>Systems, networks and services of telecommunications</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>Telemetry. Remote supervision. Telewarning. Remote control</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Juvert, Joan</creatorcontrib><creatorcontrib>Gonzalez Fernandez, Alfredo Abelardo</creatorcontrib><creatorcontrib>Morales-Sanchez, Alfredo</creatorcontrib><creatorcontrib>Barreto, Jorge</creatorcontrib><creatorcontrib>Aceves, Mariano</creatorcontrib><creatorcontrib>Llobera, Andreu</creatorcontrib><creatorcontrib>Dominguez, Carlos</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Juvert, Joan</au><au>Gonzalez Fernandez, Alfredo Abelardo</au><au>Morales-Sanchez, Alfredo</au><au>Barreto, Jorge</au><au>Aceves, Mariano</au><au>Llobera, Andreu</au><au>Dominguez, Carlos</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>DC Electroluminescence Efficiency of Silicon Rich Silicon Oxide Light Emitting Capacitors</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2013-09-01</date><risdate>2013</risdate><volume>31</volume><issue>17</issue><spage>2913</spage><epage>2918</epage><pages>2913-2918</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>We analyze the influence of the fabrication technique and the silicon excess on the power efficiency and evolution with time of the electroluminescence of silicon rich silicon oxide in metal-oxide-semiconductor like light emitting capacitors under direct current. The silicon rich silicon oxide layers have been fabricated using two different techniques, namely plasma enhanced chemical vapor deposition and silicon ion implantation. Six different silicon excesses have been studied, ranging from 6 at. % to 15 at. %. It is shown that both the power efficiency and external quantum efficiency increase with the silicon excess due to a decrease in the electroluminescence current threshold. The maximum value of the power efficiency has been found to be (2.6±0.3)×10 -5 in the ion implanted sample with 15 at. % silicon excess. Significant differences in the evolution of the electroluminescence with time are found depending on the fabrication technique.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JLT.2013.2276435</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Current density Detectors Electroluminescence electroluminescent devices Electronics Exact sciences and technology Fabrication Microelectronic fabrication (materials and surfaces technology) MIS devices nanoparticles nanostructured materials Optical variables measurement Optoelectronic devices Sea measurements semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Services and terminals of telecommunications Silicon silicon devices Systems, networks and services of telecommunications Telecommunications Telecommunications and information theory Telemetry. Remote supervision. Telewarning. Remote control |
| title | DC Electroluminescence Efficiency of Silicon Rich Silicon Oxide Light Emitting Capacitors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T07%3A21%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=DC%20Electroluminescence%20Efficiency%20of%20Silicon%20Rich%20Silicon%20Oxide%20Light%20Emitting%20Capacitors&rft.jtitle=Journal%20of%20lightwave%20technology&rft.au=Juvert,%20Joan&rft.date=2013-09-01&rft.volume=31&rft.issue=17&rft.spage=2913&rft.epage=2918&rft.pages=2913-2918&rft.issn=0733-8724&rft.eissn=1558-2213&rft.coden=JLTEDG&rft_id=info:doi/10.1109/JLT.2013.2276435&rft_dat=%3Cpascalfrancis_RIE%3E27834041%3C/pascalfrancis_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6574204&rfr_iscdi=true |