Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator
We propose and analyze a novel compact electrooptic modulator on a silicon-on-insulator (SOI) rib waveguide. The device confines both optical field and charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Perot microcavity with deep Si/SiO/sub 2/ Bragg refle...
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| Veröffentlicht in: | Journal of lightwave technology 2003-04, Vol.21 (4), p.1089-1098 |
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| container_issue | 4 |
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| container_title | Journal of lightwave technology |
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| creator | Barrios, C.A. de Almeida, V.R. Lipson, M. |
| description | We propose and analyze a novel compact electrooptic modulator on a silicon-on-insulator (SOI) rib waveguide. The device confines both optical field and charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Perot microcavity with deep Si/SiO/sub 2/ Bragg reflectors. Carriers are laterally confined in the cavity region by employing deep-etched trenches. The refractive index of the cavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode. The device has been designed and analyzed using electrical and optical simulations. Our calculations predict, for a 20-/spl mu/m-long device, a modulation depth of around 80% and a transmittance of 86% at an operating wavelength of 1.55 /spl mu/m by using an electrical power under dc conditions on the order of 25 /spl mu/W. |
| doi_str_mv | 10.1109/JLT.2003.810090 |
| format | Article |
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The device confines both optical field and charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Perot microcavity with deep Si/SiO/sub 2/ Bragg reflectors. Carriers are laterally confined in the cavity region by employing deep-etched trenches. The refractive index of the cavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode. The device has been designed and analyzed using electrical and optical simulations. Our calculations predict, for a 20-/spl mu/m-long device, a modulation depth of around 80% and a transmittance of 86% at an operating wavelength of 1.55 /spl mu/m by using an electrical power under dc conditions on the order of 25 /spl mu/W.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2003.810090</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Carrier confinement ; Charge carriers ; Circuit properties ; Devices ; Diodes ; Dispersions ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Electrooptic modulators ; Electrooptical waveguides ; Electrooptics ; Exact sciences and technology ; Holes ; Integrated optics. Optical fibers and wave guides ; Microcavities ; Modulation ; Modulators ; Optical and optoelectronic circuits ; Optical devices ; Optical modulation ; Optical refraction ; Optical variables control ; Optical waveguides ; Optoelectronic devices ; Oscillators, resonators, synthetizers ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Silicon on insulator technology</subject><ispartof>Journal of lightwave technology, 2003-04, Vol.21 (4), p.1089-1098</ispartof><rights>2003 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2003</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c443t-6596c5217fe05860a1196a99673f095f1ce2bf92fb705856ccfcf2ba250fb5bb3</citedby><cites>FETCH-LOGICAL-c443t-6596c5217fe05860a1196a99673f095f1ce2bf92fb705856ccfcf2ba250fb5bb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1207361$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1207361$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14926188$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Barrios, C.A.</creatorcontrib><creatorcontrib>de Almeida, V.R.</creatorcontrib><creatorcontrib>Lipson, M.</creatorcontrib><title>Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>We propose and analyze a novel compact electrooptic modulator on a silicon-on-insulator (SOI) rib waveguide. The device confines both optical field and charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Perot microcavity with deep Si/SiO/sub 2/ Bragg reflectors. Carriers are laterally confined in the cavity region by employing deep-etched trenches. The refractive index of the cavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode. The device has been designed and analyzed using electrical and optical simulations. Our calculations predict, for a 20-/spl mu/m-long device, a modulation depth of around 80% and a transmittance of 86% at an operating wavelength of 1.55 /spl mu/m by using an electrical power under dc conditions on the order of 25 /spl mu/W.</description><subject>Applied sciences</subject><subject>Carrier confinement</subject><subject>Charge carriers</subject><subject>Circuit properties</subject><subject>Devices</subject><subject>Diodes</subject><subject>Dispersions</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Electrooptic modulators</subject><subject>Electrooptical waveguides</subject><subject>Electrooptics</subject><subject>Exact sciences and technology</subject><subject>Holes</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>Microcavities</subject><subject>Modulation</subject><subject>Modulators</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical devices</subject><subject>Optical modulation</subject><subject>Optical refraction</subject><subject>Optical variables control</subject><subject>Optical waveguides</subject><subject>Optoelectronic devices</subject><subject>Oscillators, resonators, synthetizers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Silicon on insulator technology</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqN0r9r3DAUB3BRGug16dwhiwm0zaLLe_plaQyhbRIOsqRTByPrpJyDz3Ikm9D_PjruIJAhdPLwPt8nrK8I-YqwRARzcbu6XzIAvtQIYOADWaCUmjKG_CNZQM051TUTn8jnnB8BUAhdL8jfVXymY3z2ibo45Hk7Tl0cqryJaaK9Hx6mTWWHdbXpHjZ0G9dzb3eArv1YJrnruxKrfO_dlGIsYVcdVEwn5CjYPvsvh-8x-fPr5_3VNV3d_b65ulxRJwSfqJJGOcmwDh6kVmARjbLGqJoHMDKg86wNhoW2LnOpnAsusNYyCaGVbcuPyY_93jHFp9nnqdl22fm-t4OPc24MoDLCSF3k93cl07UwhuN_QF6O51Dg-bsQgTFtmOB1oWdv6GOc01BuptFaMCUEyoIu9silmHPyoRlTt7XpX9nU7HpuSs_Nrudm33NJfDustdnZPiQ7uC6_xoRhCvXu30_3rvPev45ZeRkK-QsGyrBu</recordid><startdate>20030401</startdate><enddate>20030401</enddate><creator>Barrios, C.A.</creator><creator>de Almeida, V.R.</creator><creator>Lipson, M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>20030401</creationdate><title>Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator</title><author>Barrios, C.A. ; de Almeida, V.R. ; Lipson, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c443t-6596c5217fe05860a1196a99673f095f1ce2bf92fb705856ccfcf2ba250fb5bb3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2003</creationdate><topic>Applied sciences</topic><topic>Carrier confinement</topic><topic>Charge carriers</topic><topic>Circuit properties</topic><topic>Devices</topic><topic>Diodes</topic><topic>Dispersions</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Electrooptic modulators</topic><topic>Electrooptical waveguides</topic><topic>Electrooptics</topic><topic>Exact sciences and technology</topic><topic>Holes</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>Microcavities</topic><topic>Modulation</topic><topic>Modulators</topic><topic>Optical and optoelectronic circuits</topic><topic>Optical devices</topic><topic>Optical modulation</topic><topic>Optical refraction</topic><topic>Optical variables control</topic><topic>Optical waveguides</topic><topic>Optoelectronic devices</topic><topic>Oscillators, resonators, synthetizers</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Silicon on insulator technology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Barrios, C.A.</creatorcontrib><creatorcontrib>de Almeida, V.R.</creatorcontrib><creatorcontrib>Lipson, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Barrios, C.A.</au><au>de Almeida, V.R.</au><au>Lipson, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2003-04-01</date><risdate>2003</risdate><volume>21</volume><issue>4</issue><spage>1089</spage><epage>1098</epage><pages>1089-1098</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>We propose and analyze a novel compact electrooptic modulator on a silicon-on-insulator (SOI) rib waveguide. The device confines both optical field and charge carriers in a micron-size region. The optical field is confined by using a planar Fabry-Perot microcavity with deep Si/SiO/sub 2/ Bragg reflectors. Carriers are laterally confined in the cavity region by employing deep-etched trenches. The refractive index of the cavity is varied by using the free-carrier dispersion effect produced by a p-i-n diode. The device has been designed and analyzed using electrical and optical simulations. Our calculations predict, for a 20-/spl mu/m-long device, a modulation depth of around 80% and a transmittance of 86% at an operating wavelength of 1.55 /spl mu/m by using an electrical power under dc conditions on the order of 25 /spl mu/W.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JLT.2003.810090</doi><tpages>10</tpages></addata></record> |
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| identifier | ISSN: 0733-8724 |
| ispartof | Journal of lightwave technology, 2003-04, Vol.21 (4), p.1089-1098 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Carrier confinement Charge carriers Circuit properties Devices Diodes Dispersions Electric, optical and optoelectronic circuits Electronic circuits Electronics Electrooptic modulators Electrooptical waveguides Electrooptics Exact sciences and technology Holes Integrated optics. Optical fibers and wave guides Microcavities Modulation Modulators Optical and optoelectronic circuits Optical devices Optical modulation Optical refraction Optical variables control Optical waveguides Optoelectronic devices Oscillators, resonators, synthetizers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Silicon on insulator technology |
| title | Low-power-consumption short-length and high-modulation-depth silicon electrooptic modulator |
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