A Transient 3-D Thermal Modeling Method for IGBT Modules Considering Uneven Power Losses and Cooling Conditions

Junction temperature is a key parameter for the safe operation of power semiconductor devices in power electronic systems. However, it is difficult to forecast the accurate thermal stress of the device in field use. Consequently, engineers tend to use higher rated devices to maintain excessive margi...

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Veröffentlicht in:	IEEE journal of emerging and selected topics in power electronics 2021-08, Vol.9 (4), p.3959-3970
Hauptverfasser:	Wang, Jianpeng, Chen, Wenjie, Wang, Laili, Wang, Binyu, Zhao, Cheng, Ma, Dingkun, Yang, Fengtao, Li, Yan
Format:	Artikel
Sprache:	eng
Schlagworte:	Circuits Electric power distribution Electronic systems Energy loss Finite element analysis Finite element method Finite element method (FEM) insulated gate bipolar transistor (IGBT) Insulated gate bipolar transistors Integrated circuit modeling Junctions Mathematical model Mathematical models Modelling Modules multiphysical fields coupling Power semiconductor devices Solid modeling Temperature distribution Thermal analysis thermal model Thermal stress Thermodynamic properties Three dimensional models
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