Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as V_{\mathrm { d}} increa...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2024, Vol.12, p.941-947
Hauptverfasser:	Liu, Yuxin, Liu, Qiang, Chen, Jin, Mu, Zhiqiang, Wei, Xing, Yu, Wenjie
Format:	Artikel
Sprache:	eng
Schlagworte:	average subthreshold swing and hysteresis-free Gallium arsenide gate-all-around Hysteresis Kink effect Logic gates MOSFET MOSFETs Semiconductor process modeling Silicon Silicon-on-insulator SOI (semiconductors) Substrates Threshold voltage void embedded silicon on insulator substrate
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