Plasma-Enhanced Atomic Layer Deposition-Based Ferroelectric Field-Effect Transistors

The use of the plasma-enhanced atomic layer deposition (ALD) technique for the deposition of HfO2-based ferroelectrics has received attention in recent years primarily due to wake-up free operation. However, these studies have primarily focused on metal-ferroelectric-metal (MFM) structures. In this...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2024, Vol.12, p.569-572
Hauptverfasser:	Park, Chinsung, Ravindran, Prasanna Venkat, Das, Dipjyoti, Ravikumar, Priyankka Gundlapudi, Zhang, Chengyang, Afroze, Nashrah, Fernandes, Lance, Kuo, Yu Hsin, Hur, Jae, Chen, Hang, Tian, Mengkun, Chern, Winston, Yu, Shimeng, Khan, Asif Islam
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic layer deposition Atomic layer epitaxy Current measurement Electric potential FEFET FeFETs Ferroelectric materials Ferroelectricity Field effect transistors Logic gates memory window plasma-enhanced atomic layer deposition Plasmas Semiconductor devices Silicon dioxide thermal atomic layer deposition Transistors Voltage Voltage measurement
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