Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the p...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2021, Vol.9, p.748-755 |
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| container_title | IEEE journal of the Electron Devices Society |
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| creator | Pradhan, Mamta Alomari, Mohammed Moser, Matthias Fahle, Dirk Hahn, Herwig Heuken, Michael Burghartz, Joachim N. |
| description | In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as \text{C}_{N} ) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only \text{C}_{N} as trap species. |
| doi_str_mv | 10.1109/JEDS.2021.3103596 |
| format | Article |
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The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as <inline-formula> <tex-math notation="LaTeX">\text{C}_{N} </tex-math></inline-formula>) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only <inline-formula> <tex-math notation="LaTeX">\text{C}_{N} </tex-math></inline-formula> as trap species.]]></description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2021.3103596</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>buffer trap modeling ; Carbon ; charge trapping ; Circuits ; Finite state machines ; Gallium nitrides ; GaN HEMT ; HEMTs ; High electron mobility transistors ; Integrated circuit modeling ; physics-based models ; Semiconductor device modeling ; Semiconductor devices ; Silicon ; Stress ; Stress measurement ; Trapping ; Voltage measurement</subject><ispartof>IEEE journal of the Electron Devices Society, 2021, Vol.9, p.748-755</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-cde6cd0049c5bfe7affa74a04898472baa4abf123892d5e0f94f3b362d1acac33</citedby><cites>FETCH-LOGICAL-c402t-cde6cd0049c5bfe7affa74a04898472baa4abf123892d5e0f94f3b362d1acac33</cites><orcidid>0000-0002-6386-5971</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9509414$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,864,2102,4024,27633,27923,27924,27925,54933</link.rule.ids></links><search><creatorcontrib>Pradhan, Mamta</creatorcontrib><creatorcontrib>Alomari, Mohammed</creatorcontrib><creatorcontrib>Moser, Matthias</creatorcontrib><creatorcontrib>Fahle, Dirk</creatorcontrib><creatorcontrib>Hahn, Herwig</creatorcontrib><creatorcontrib>Heuken, Michael</creatorcontrib><creatorcontrib>Burghartz, Joachim N.</creatorcontrib><title>Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description><![CDATA[In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as <inline-formula> <tex-math notation="LaTeX">\text{C}_{N} </tex-math></inline-formula>) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only <inline-formula> <tex-math notation="LaTeX">\text{C}_{N} </tex-math></inline-formula> as trap species.]]></description><subject>buffer trap modeling</subject><subject>Carbon</subject><subject>charge trapping</subject><subject>Circuits</subject><subject>Finite state machines</subject><subject>Gallium nitrides</subject><subject>GaN HEMT</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>Integrated circuit modeling</subject><subject>physics-based models</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor devices</subject><subject>Silicon</subject><subject>Stress</subject><subject>Stress measurement</subject><subject>Trapping</subject><subject>Voltage measurement</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNkVtr20AQhUVpoCHJDwh9WeiznL1L-xgcN3GJ24Cd52X2Zq9xtequUsi_r1SFkHmZ4XDmm4FTVdcELwjB6ubH6m67oJiSBSOYCSU_VeeUyLaWDeOfP8xfqqtSjnislkgl5XkVng6vJVo4oU1y_hS7PUoBLQ-Q9x7tMvT9JK1C8HYoKHboHn7ebCO683-j9QVB59C6syn3KcMQUzd5hoNHt9tN_bDa7GbuZXUW4FT81Vu_qJ6_r3bLh_rx1_16eftYW47pUFvnpXUYc2WFCb6BEKDhgHmrWt5QA8DBBEJZq6gTHgfFAzNMUkfAgmXsolrPXJfgqPscf0N-1Qmi_i-kvNeQh2hPXvt2xHqsGmscNw6MIQKoNGJ8ggXhRta3mdXn9OfFl0Ef00vuxvc1FZIyIpmQo4vMLptTKdmH96sE6ykdPaWjp3T0Wzrjztd5J3rv3_1KYMUJZ_8AcieKiw</recordid><startdate>2021</startdate><enddate>2021</enddate><creator>Pradhan, Mamta</creator><creator>Alomari, Mohammed</creator><creator>Moser, Matthias</creator><creator>Fahle, Dirk</creator><creator>Hahn, Herwig</creator><creator>Heuken, Michael</creator><creator>Burghartz, Joachim N.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The model is based on the physics of trapping and detrapping of electrons in carbon at nitrogen-site acceptor trap (denoted here as <inline-formula> <tex-math notation="LaTeX">\text{C}_{N} </tex-math></inline-formula>) and does not require an equivalent Resistance-Capacitance circuit. The model is validated against three off-state stress drain voltages of 50 V, 100 V, and 150 V using only <inline-formula> <tex-math notation="LaTeX">\text{C}_{N} </tex-math></inline-formula> as trap species.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JEDS.2021.3103596</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-6386-5971</orcidid><oa>free_for_read</oa></addata></record> |
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| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals |
| subjects | buffer trap modeling Carbon charge trapping Circuits Finite state machines Gallium nitrides GaN HEMT HEMTs High electron mobility transistors Integrated circuit modeling physics-based models Semiconductor device modeling Semiconductor devices Silicon Stress Stress measurement Trapping Voltage measurement |
| title | Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model |
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