Investigation on Stability of p-GaN HEMTs With an Indium-Tin-Oxide Gate Under Forward Gate Bias

In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., 1 \mathbf {\mathrm {\times }} 10 ^{19} cm −3 and 8 \mathbf {\mathrm {\times }} 10 ^{19\,\,} cm −3 ,in p-GaN layer are investigated for the first time under the forward gate...

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