Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering
In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations. The proposed L-shaped TFET has the pocket doping (p + -do...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2021, Vol.9, p.359-364 |
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| description | In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations. The proposed L-shaped TFET has the pocket doping (p + -doping for n-type operations) underlying the gate, which can suppress the corner tunneling generated near the source edge by the electric-field crowding. Thus, the on/off transition is significantly improved since the corner tunneling is the main cause of the degradation of the switching characteristics. To maximize the performance enhancement, the concentration of the pocket doping ( {N} _{\mathrm {POC}} ) is optimized. As a result, the averaged subthreshold swing ( SS_{\mathrm {AVE}} ) gets reduced from 60 to 26 mV/dec and the on-current ( {I} _{\mathrm {ON}} ) becomes ~ 2.0 times increased as compared to the conventional L-shaped TFETs. Moreover, it is confirmed that the pocket doping effectively suppresses the corner tunneling without the on-current reduction even in the extremely scaled gate length ( {L} _{\mathrm {G}} ) device. |
| doi_str_mv | 10.1109/JEDS.2021.3066460 |
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The proposed L-shaped TFET has the pocket doping (p + -doping for n-type operations) underlying the gate, which can suppress the corner tunneling generated near the source edge by the electric-field crowding. Thus, the on/off transition is significantly improved since the corner tunneling is the main cause of the degradation of the switching characteristics. To maximize the performance enhancement, the concentration of the pocket doping (<inline-formula> <tex-math notation="LaTeX">{N} _{\mathrm {POC}} </tex-math></inline-formula>) is optimized. As a result, the averaged subthreshold swing (<inline-formula> <tex-math notation="LaTeX">SS_{\mathrm {AVE}} </tex-math></inline-formula>) gets reduced from 60 to 26 mV/dec and the on-current (<inline-formula> <tex-math notation="LaTeX">{I} _{\mathrm {ON}} </tex-math></inline-formula>) becomes ~ 2.0 times increased as compared to the conventional L-shaped TFETs. Moreover, it is confirmed that the pocket doping effectively suppresses the corner tunneling without the on-current reduction even in the extremely scaled gate length (<inline-formula> <tex-math notation="LaTeX">{L} _{\mathrm {G}} </tex-math></inline-formula>) device.]]></description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2021.3066460</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Band-to-band tunneling (BTBT) ; corner tunneling ; Doping ; Electric fields ; gate-normal tunnel FET (TFET) ; hump phenomenon ; L-shaped TFET ; subthreshold swing (SS) ; Switching ; TFETs ; Tunneling</subject><ispartof>IEEE journal of the Electron Devices Society, 2021, Vol.9, p.359-364</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c472t-ec8cf8a749eea872a3648ee7e8607aef00b2deae6f9c151f0bc6207c561af2093</citedby><cites>FETCH-LOGICAL-c472t-ec8cf8a749eea872a3648ee7e8607aef00b2deae6f9c151f0bc6207c561af2093</cites><orcidid>0000-0001-7588-3723</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9380718$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,860,2096,4010,27610,27900,27901,27902,54908</link.rule.ids></links><search><creatorcontrib>Kim, Hyun Woo</creatorcontrib><creatorcontrib>Kwon, Daewoong</creatorcontrib><title>Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description><![CDATA[In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations. The proposed L-shaped TFET has the pocket doping (p + -doping for n-type operations) underlying the gate, which can suppress the corner tunneling generated near the source edge by the electric-field crowding. Thus, the on/off transition is significantly improved since the corner tunneling is the main cause of the degradation of the switching characteristics. To maximize the performance enhancement, the concentration of the pocket doping (<inline-formula> <tex-math notation="LaTeX">{N} _{\mathrm {POC}} </tex-math></inline-formula>) is optimized. As a result, the averaged subthreshold swing (<inline-formula> <tex-math notation="LaTeX">SS_{\mathrm {AVE}} </tex-math></inline-formula>) gets reduced from 60 to 26 mV/dec and the on-current (<inline-formula> <tex-math notation="LaTeX">{I} _{\mathrm {ON}} </tex-math></inline-formula>) becomes ~ 2.0 times increased as compared to the conventional L-shaped TFETs. Moreover, it is confirmed that the pocket doping effectively suppresses the corner tunneling without the on-current reduction even in the extremely scaled gate length (<inline-formula> <tex-math notation="LaTeX">{L} _{\mathrm {G}} </tex-math></inline-formula>) device.]]></description><subject>Band-to-band tunneling (BTBT)</subject><subject>corner tunneling</subject><subject>Doping</subject><subject>Electric fields</subject><subject>gate-normal tunnel FET (TFET)</subject><subject>hump phenomenon</subject><subject>L-shaped TFET</subject><subject>subthreshold swing (SS)</subject><subject>Switching</subject><subject>TFETs</subject><subject>Tunneling</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNUUtLw0AQDqJg0f4A8RLwnDq7SfZxlLZqpeghFY_LZjNJt9QkblLEf-_GlOJcZhi-F3xBcENgRgjI-5flIptRoGQWA2MJg7NgQgkTEeNxcv7vvgymXbcDP4IwydgkeM16xDbMvm1vtrauwvlWO216dLbrrenCpgzXUbbVLRbh5lDXuA8fl5vww_bbcNG0A2VZV7ZGz6ir6-Ci1PsOp8d9Fbx79Pw5Wr89reYP68gknPYRGmFKoXkiEbXgVMcsEYgcBQOusQTIaYEaWSkNSUkJuWEUuEkZ0SUFGV8Fq1G3aPROtc5-avejGm3V36NxldLO59-jQklymRtTyDRNdMokEoIxJLoAYoCC17obtVrXfB2w69WuObjax1c0BW8Z84R5FBlRxjVd57A8uRJQQwtqaEENLahjC55zO3IsIp7wMhbAiYh_Adbogdg</recordid><startdate>2021</startdate><enddate>2021</enddate><creator>Kim, Hyun Woo</creator><creator>Kwon, Daewoong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0001-7588-3723</orcidid></search><sort><creationdate>2021</creationdate><title>Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering</title><author>Kim, Hyun Woo ; Kwon, Daewoong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c472t-ec8cf8a749eea872a3648ee7e8607aef00b2deae6f9c151f0bc6207c561af2093</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Band-to-band tunneling (BTBT)</topic><topic>corner tunneling</topic><topic>Doping</topic><topic>Electric fields</topic><topic>gate-normal tunnel FET (TFET)</topic><topic>hump phenomenon</topic><topic>L-shaped TFET</topic><topic>subthreshold swing (SS)</topic><topic>Switching</topic><topic>TFETs</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Hyun Woo</creatorcontrib><creatorcontrib>Kwon, Daewoong</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE journal of the Electron Devices Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Hyun Woo</au><au>Kwon, Daewoong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering</atitle><jtitle>IEEE journal of the Electron Devices Society</jtitle><stitle>JEDS</stitle><date>2021</date><risdate>2021</risdate><volume>9</volume><spage>359</spage><epage>364</epage><pages>359-364</pages><issn>2168-6734</issn><eissn>2168-6734</eissn><coden>IJEDAC</coden><abstract><![CDATA[In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations. The proposed L-shaped TFET has the pocket doping (p + -doping for n-type operations) underlying the gate, which can suppress the corner tunneling generated near the source edge by the electric-field crowding. Thus, the on/off transition is significantly improved since the corner tunneling is the main cause of the degradation of the switching characteristics. To maximize the performance enhancement, the concentration of the pocket doping (<inline-formula> <tex-math notation="LaTeX">{N} _{\mathrm {POC}} </tex-math></inline-formula>) is optimized. As a result, the averaged subthreshold swing (<inline-formula> <tex-math notation="LaTeX">SS_{\mathrm {AVE}} </tex-math></inline-formula>) gets reduced from 60 to 26 mV/dec and the on-current (<inline-formula> <tex-math notation="LaTeX">{I} _{\mathrm {ON}} </tex-math></inline-formula>) becomes ~ 2.0 times increased as compared to the conventional L-shaped TFETs. Moreover, it is confirmed that the pocket doping effectively suppresses the corner tunneling without the on-current reduction even in the extremely scaled gate length (<inline-formula> <tex-math notation="LaTeX">{L} _{\mathrm {G}} </tex-math></inline-formula>) device.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JEDS.2021.3066460</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0001-7588-3723</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Band-to-band tunneling (BTBT) corner tunneling Doping Electric fields gate-normal tunnel FET (TFET) hump phenomenon L-shaped TFET subthreshold swing (SS) Switching TFETs Tunneling |
| title | Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering |
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