Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and its Effect on Analog Figures of Merit
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of an...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2020, Vol.8, p.789-796 |
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| creator | Nyssens, Lucas Halder, Arka Esfeh, Babak Kazemi Planes, Nicolas Haond, Michel Flandre, Denis Raskin, Jean-Pierre Kilchytska, Valeriya |
| description | This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K in short-channel devices are of the same order of magnitude. The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of SH-related features in advanced technologies at cryogenic temperatures. |
| doi_str_mv | 10.1109/JEDS.2020.2999632 |
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S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K in short-channel devices are of the same order of magnitude. The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of SH-related features in advanced technologies at cryogenic temperatures.</description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2020.2999632</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>analog figures of merit ; Cryogenic engineering ; Cryogenic temperature ; Cryogenics ; FDSOI ; Frequency measurement ; Frequency ranges ; Heating ; MOSFET ; MOSFETs ; Parameters ; Radio frequency ; Room temperature ; S-parameters ; self-heating ; Silicon-on-insulator ; Thermal resistance ; Thin bodies ; UTBB</subject><ispartof>IEEE journal of the Electron Devices Society, 2020, Vol.8, p.789-796</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-2de83bbaa35497b326e3b2c978375e3d61b7c5eefcb697118f6c2f9f9d45015e3</citedby><cites>FETCH-LOGICAL-c402t-2de83bbaa35497b326e3b2c978375e3d61b7c5eefcb697118f6c2f9f9d45015e3</cites><orcidid>0000-0001-9715-9699 ; 0000-0002-3104-890X ; 0000-0001-5298-5196 ; 0000-0003-3996-7553</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9107227$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,777,781,861,2096,4010,27614,27904,27905,27906,54914</link.rule.ids></links><search><creatorcontrib>Nyssens, Lucas</creatorcontrib><creatorcontrib>Halder, Arka</creatorcontrib><creatorcontrib>Esfeh, Babak Kazemi</creatorcontrib><creatorcontrib>Planes, Nicolas</creatorcontrib><creatorcontrib>Haond, Michel</creatorcontrib><creatorcontrib>Flandre, Denis</creatorcontrib><creatorcontrib>Raskin, Jean-Pierre</creatorcontrib><creatorcontrib>Kilchytska, Valeriya</creatorcontrib><title>Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and its Effect on Analog Figures of Merit</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description>This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K in short-channel devices are of the same order of magnitude. The observed increase in SH characteristic frequency with temperature reduction emphasizes the advantage of the RF technique for the fair analysis of SH-related features in advanced technologies at cryogenic temperatures.</description><subject>analog figures of merit</subject><subject>Cryogenic engineering</subject><subject>Cryogenic temperature</subject><subject>Cryogenics</subject><subject>FDSOI</subject><subject>Frequency measurement</subject><subject>Frequency ranges</subject><subject>Heating</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Parameters</subject><subject>Radio frequency</subject><subject>Room temperature</subject><subject>S-parameters</subject><subject>self-heating</subject><subject>Silicon-on-insulator</subject><subject>Thermal resistance</subject><subject>Thin bodies</subject><subject>UTBB</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNkUFvGyEQhVdRKzVK8wOqXpByXheGXViOiWMnrhL5YOeMWHZYYTmLC_iQfx8cR1Hnwmj45j3Qq6pfjM4Yo-rP38X9ZgYU6AyUUoLDRXUJTHS1kLz59l__o7pOaUdLdUwoIS4rt8G9qx_RZD-NxE9keb9Zr8jL9u6OPK83y8U2EZPJPL6FESdvyRZfDxhNPkYsN9NAfE5k4RzaTMJEbiezDyNZ-vEDCI48Y_T5Z_XdmX3C68_zqnop0vPH-mn9sJrfPtW2oZBrGLDjfW8Mbxslew4CeQ9WyY7LFvkgWC9ti-hsL5RkrHPCglNODU1LWSGuqtVZdwhmpw_Rv5r4poPx-mMQ4qhNzN7uUVOQYAfaAlDTIC1uHFAMfdMoZpnkRevmrHWI4d8RU9a7cIzlf0lDwxvGVHllodiZsjGkFNF9uTKqT-noUzr6lI7-TKfs_D7veET84hWjEkDydwG7h8c</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Nyssens, Lucas</creator><creator>Halder, Arka</creator><creator>Esfeh, Babak Kazemi</creator><creator>Planes, Nicolas</creator><creator>Haond, Michel</creator><creator>Flandre, Denis</creator><creator>Raskin, Jean-Pierre</creator><creator>Kilchytska, Valeriya</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of analog figures of merit (FoMs) at different temperatures. Contrary to the expectations, the effect of self-heating on analog FoMs is slightly weaker at cryogenic temperatures with respect to room-temperature case. The extracted thermal resistance and channel temperature rise at 300 K and 77 K in short-channel devices are of the same order of magnitude. 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| subjects | analog figures of merit Cryogenic engineering Cryogenic temperature Cryogenics FDSOI Frequency measurement Frequency ranges Heating MOSFET MOSFETs Parameters Radio frequency Room temperature S-parameters self-heating Silicon-on-insulator Thermal resistance Thin bodies UTBB |
| title | Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and its Effect on Analog Figures of Merit |
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