Effect of Substrate Choice on Transient Performance of Lateral GaN FETs

This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on capacitance-voltage characteristics of the device....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE journal of the Electron Devices Society 2020, Vol.8, p.331-335
Hauptverfasser:	Hontz, Michael R., Chu, Rongming, Khanna, Raghav
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Capacitance-voltage characteristics Computer simulation Field effect transistors Gallium compounds Gallium nitride Gallium nitrides Performance evaluation Power transistors semiconductor device modeling Substrates Switches Transient analysis Transient performance
Online-Zugang:	Volltext
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