Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays
This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2020, Vol.8, p.235-240 |
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| container_title | IEEE journal of the Electron Devices Society |
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| creator | Lin, Chih-Lung Chang, Jui-Hung Lai, Po-Cheng Shih, Li-Wei Chen, Sung-Chun Cheng, Mao-Hsun |
| description | This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme. |
| doi_str_mv | 10.1109/JEDS.2020.2974576 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_JEDS_2020_2974576</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9001057</ieee_id><doaj_id>oai_doaj_org_article_d50b90a27def4dad869d85ace6573937</doaj_id><sourcerecordid>2372284916</sourcerecordid><originalsourceid>FETCH-LOGICAL-c402t-306bdfa2e4967b9bb1f5479c2d7a6aa02e80c8ab6ee6bd78643d9df3cb1a01e43</originalsourceid><addsrcrecordid>eNpNkVtLAzEQhRdRUNQfIL4EfN6aZLPJ5rG09cZKxQs-htlktk1tm5rdevn3bm0R52WG4ZtzBk6SnDHaY4zqy7vR8KnHKac9rpXIldxLjjiTRSpVJvb_zYfJadPMaFcFk1rKo2T84L9wTgY-2rVvyatvp6REeIMJkoeIH7hsfViSJzvFBZI6RFKGz_QqwgLTR2iR9O_H5WhIhr5ZzeG7OUkOapg3eLrrx8nL1eh5cJOW4-vbQb9MraC8TTMqK1cDR6GlqnRVsToXSlvuFEgAyrGgtoBKInagKqTInHZ1ZisGlKHIjpPbra4LMDOr6BcQv00Ab34XIU4MxNbbORqX00pT4MphLRy4QmpX5GBR5irTmeq0LrZaqxje19i0ZhbWcdm9b3imOC-EZrKj2JayMTRNxPrPlVGzicFsYjCbGMwuhu7mfHvjEfGP15Qy2nn_AN38gg0</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2372284916</pqid></control><display><type>article</type><title>Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays</title><source>IEEE Open Access Journals</source><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><creator>Lin, Chih-Lung ; Chang, Jui-Hung ; Lai, Po-Cheng ; Shih, Li-Wei ; Chen, Sung-Chun ; Cheng, Mao-Hsun</creator><creatorcontrib>Lin, Chih-Lung ; Chang, Jui-Hung ; Lai, Po-Cheng ; Shih, Li-Wei ; Chen, Sung-Chun ; Cheng, Mao-Hsun</creatorcontrib><description>This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.</description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2020.2974576</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Active matrix displays ; Active matrix organic light emitting diodes ; Active-matrix organic light-emitting diode~(AMOLED) ; Capacitors ; Circuits ; Displays ; Emission ; Leakage current ; leakage current prevention ; Leakage currents ; Logic gates ; Low temperature ; low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) ; Organic light emitting diodes ; Pixels ; Semiconductor devices ; Silicon films ; Thin film transistors ; Threshold voltage ; Turning</subject><ispartof>IEEE journal of the Electron Devices Society, 2020, Vol.8, p.235-240</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-306bdfa2e4967b9bb1f5479c2d7a6aa02e80c8ab6ee6bd78643d9df3cb1a01e43</citedby><cites>FETCH-LOGICAL-c402t-306bdfa2e4967b9bb1f5479c2d7a6aa02e80c8ab6ee6bd78643d9df3cb1a01e43</cites><orcidid>0000-0002-4948-8591 ; 0000-0002-4124-4226</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9001057$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,860,2096,4010,27610,27900,27901,27902,54908</link.rule.ids></links><search><creatorcontrib>Lin, Chih-Lung</creatorcontrib><creatorcontrib>Chang, Jui-Hung</creatorcontrib><creatorcontrib>Lai, Po-Cheng</creatorcontrib><creatorcontrib>Shih, Li-Wei</creatorcontrib><creatorcontrib>Chen, Sung-Chun</creatorcontrib><creatorcontrib>Cheng, Mao-Hsun</creatorcontrib><title>Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description>This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.</description><subject>Active matrix displays</subject><subject>Active matrix organic light emitting diodes</subject><subject>Active-matrix organic light-emitting diode~(AMOLED)</subject><subject>Capacitors</subject><subject>Circuits</subject><subject>Displays</subject><subject>Emission</subject><subject>Leakage current</subject><subject>leakage current prevention</subject><subject>Leakage currents</subject><subject>Logic gates</subject><subject>Low temperature</subject><subject>low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs)</subject><subject>Organic light emitting diodes</subject><subject>Pixels</subject><subject>Semiconductor devices</subject><subject>Silicon films</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>Turning</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNkVtLAzEQhRdRUNQfIL4EfN6aZLPJ5rG09cZKxQs-htlktk1tm5rdevn3bm0R52WG4ZtzBk6SnDHaY4zqy7vR8KnHKac9rpXIldxLjjiTRSpVJvb_zYfJadPMaFcFk1rKo2T84L9wTgY-2rVvyatvp6REeIMJkoeIH7hsfViSJzvFBZI6RFKGz_QqwgLTR2iR9O_H5WhIhr5ZzeG7OUkOapg3eLrrx8nL1eh5cJOW4-vbQb9MraC8TTMqK1cDR6GlqnRVsToXSlvuFEgAyrGgtoBKInagKqTInHZ1ZisGlKHIjpPbra4LMDOr6BcQv00Ab34XIU4MxNbbORqX00pT4MphLRy4QmpX5GBR5irTmeq0LrZaqxje19i0ZhbWcdm9b3imOC-EZrKj2JayMTRNxPrPlVGzicFsYjCbGMwuhu7mfHvjEfGP15Qy2nn_AN38gg0</recordid><startdate>2020</startdate><enddate>2020</enddate><creator>Lin, Chih-Lung</creator><creator>Chang, Jui-Hung</creator><creator>Lai, Po-Cheng</creator><creator>Shih, Li-Wei</creator><creator>Chen, Sung-Chun</creator><creator>Cheng, Mao-Hsun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-4948-8591</orcidid><orcidid>https://orcid.org/0000-0002-4124-4226</orcidid></search><sort><creationdate>2020</creationdate><title>Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays</title><author>Lin, Chih-Lung ; Chang, Jui-Hung ; Lai, Po-Cheng ; Shih, Li-Wei ; Chen, Sung-Chun ; Cheng, Mao-Hsun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c402t-306bdfa2e4967b9bb1f5479c2d7a6aa02e80c8ab6ee6bd78643d9df3cb1a01e43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Active matrix displays</topic><topic>Active matrix organic light emitting diodes</topic><topic>Active-matrix organic light-emitting diode~(AMOLED)</topic><topic>Capacitors</topic><topic>Circuits</topic><topic>Displays</topic><topic>Emission</topic><topic>Leakage current</topic><topic>leakage current prevention</topic><topic>Leakage currents</topic><topic>Logic gates</topic><topic>Low temperature</topic><topic>low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs)</topic><topic>Organic light emitting diodes</topic><topic>Pixels</topic><topic>Semiconductor devices</topic><topic>Silicon films</topic><topic>Thin film transistors</topic><topic>Threshold voltage</topic><topic>Turning</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lin, Chih-Lung</creatorcontrib><creatorcontrib>Chang, Jui-Hung</creatorcontrib><creatorcontrib>Lai, Po-Cheng</creatorcontrib><creatorcontrib>Shih, Li-Wei</creatorcontrib><creatorcontrib>Chen, Sung-Chun</creatorcontrib><creatorcontrib>Cheng, Mao-Hsun</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE journal of the Electron Devices Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lin, Chih-Lung</au><au>Chang, Jui-Hung</au><au>Lai, Po-Cheng</au><au>Shih, Li-Wei</au><au>Chen, Sung-Chun</au><au>Cheng, Mao-Hsun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays</atitle><jtitle>IEEE journal of the Electron Devices Society</jtitle><stitle>JEDS</stitle><date>2020</date><risdate>2020</risdate><volume>8</volume><spage>235</spage><epage>240</epage><pages>235-240</pages><issn>2168-6734</issn><eissn>2168-6734</eissn><coden>IJEDAC</coden><abstract>This work proposes a new pixel circuit for active-matrix organic light-emitting (AMOLED) smartwatch displays with a low frame rate. Within the long emission period, the leakage current of a low-temperature polycrystalline silicon thin-film transistor (LTPS TFT) is reduced to suppress the distortion of the driving voltage at the gate node of the driving TFT. Based on the measured electrical characteristics of a fabricated p-type LTPS TFT, the HSPICE model is established to verify the feasibility of the proposed circuit. The analytical results indicate that the relative OLED current error rates are all below 4.73%, as the threshold voltage of TFT varies by ±0.5 V. Notably, the OLED current varies by only 2.94% during the emission period of 66.7 ms at a medium gray level, demonstrating the effectiveness of the leakage prevention scheme.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JEDS.2020.2974576</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-4948-8591</orcidid><orcidid>https://orcid.org/0000-0002-4124-4226</orcidid><oa>free_for_read</oa></addata></record> |
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| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals |
| subjects | Active matrix displays Active matrix organic light emitting diodes Active-matrix organic light-emitting diode~(AMOLED) Capacitors Circuits Displays Emission Leakage current leakage current prevention Leakage currents Logic gates Low temperature low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) Organic light emitting diodes Pixels Semiconductor devices Silicon films Thin film transistors Threshold voltage Turning |
| title | Pixel Circuit With Leakage Prevention Scheme for Low-Frame-Rate AMOLED Displays |
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