Nondestructive Evaluation of Multijunction Solar Cells for Matching Currents
Nondestructive methods determining current mismatched ratios (CMMRs) between key subcells in a multijunction solar cell were proposed in view of a compensated concept of subcell's current. Various compensated lights were employed to determine key CMMR of InGaP-InGaAs-Ge related triple-junction...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2019, Vol.7, p.1047-1054 |
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| creator | Huang, Chia-Hua Lo, Hao Lo, Chieh Hsu, Chia-Chieh Lour, Wen-Shiung |
| description | Nondestructive methods determining current mismatched ratios (CMMRs) between key subcells in a multijunction solar cell were proposed in view of a compensated concept of subcell's current. Various compensated lights were employed to determine key CMMR of InGaP-InGaAs-Ge related triple-junction (3J) solar cells. When a 405 nm compensated light is used, short-circuit currents of 9.37 mA/cm 2 and 10.28 mA/cm 2 were determined for the InGaP-subcell and InGaAs-subcell, respectively, resulting in a CMMR of 4.4%. Excellent agreement in evaluated properties was obtained when a 532 nm, a 638 nm, and 808 nm compensated lights were used. A 3J solar cell fabricated with an anti-reflected coating was also evaluated. Measured results reveal that an overall short-circuit current of 13.5 mA/cm 2 is still limited by the InGaP-subcell, resulting in a conversion efficiency of 27%. Together with determined short-circuit current of 15.5 mA/cm 2 for the InGaAs-subcell, a possible optimum conversion efficiency of 29.11% is expected. |
| doi_str_mv | 10.1109/JEDS.2019.2944571 |
| format | Article |
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Various compensated lights were employed to determine key CMMR of InGaP-InGaAs-Ge related triple-junction (3J) solar cells. When a 405 nm compensated light is used, short-circuit currents of 9.37 mA/cm 2 and 10.28 mA/cm 2 were determined for the InGaP-subcell and InGaAs-subcell, respectively, resulting in a CMMR of 4.4%. Excellent agreement in evaluated properties was obtained when a 532 nm, a 638 nm, and 808 nm compensated lights were used. A 3J solar cell fabricated with an anti-reflected coating was also evaluated. Measured results reveal that an overall short-circuit current of 13.5 mA/cm 2 is still limited by the InGaP-subcell, resulting in a conversion efficiency of 27%. Together with determined short-circuit current of 15.5 mA/cm 2 for the InGaAs-subcell, a possible optimum conversion efficiency of 29.11% is expected.</description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2019.2944571</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Absorption ; Circuits ; Conversion ; Current measurement ; current-match ; Energy conversion efficiency ; Gallium indium phosphide ; Inspection ; multijunction ; Nondestructive testing ; Photonic band gap ; Photovoltaic cells ; quantum efficiency ; Short circuit currents ; solar cell ; Solar cells ; subcell ; Temperature measurement</subject><ispartof>IEEE journal of the Electron Devices Society, 2019, Vol.7, p.1047-1054</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c402t-5304804dcd44a8a967429b86a181e7d54adf34719814ef9efe9fe89fb92a406d3</citedby><cites>FETCH-LOGICAL-c402t-5304804dcd44a8a967429b86a181e7d54adf34719814ef9efe9fe89fb92a406d3</cites><orcidid>0000-0001-9127-1874 ; 0000-0002-6914-1085</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8854291$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,864,2102,4024,27633,27923,27924,27925,54933</link.rule.ids></links><search><creatorcontrib>Huang, Chia-Hua</creatorcontrib><creatorcontrib>Lo, Hao</creatorcontrib><creatorcontrib>Lo, Chieh</creatorcontrib><creatorcontrib>Hsu, Chia-Chieh</creatorcontrib><creatorcontrib>Lour, Wen-Shiung</creatorcontrib><title>Nondestructive Evaluation of Multijunction Solar Cells for Matching Currents</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description>Nondestructive methods determining current mismatched ratios (CMMRs) between key subcells in a multijunction solar cell were proposed in view of a compensated concept of subcell's current. Various compensated lights were employed to determine key CMMR of InGaP-InGaAs-Ge related triple-junction (3J) solar cells. When a 405 nm compensated light is used, short-circuit currents of 9.37 mA/cm 2 and 10.28 mA/cm 2 were determined for the InGaP-subcell and InGaAs-subcell, respectively, resulting in a CMMR of 4.4%. Excellent agreement in evaluated properties was obtained when a 532 nm, a 638 nm, and 808 nm compensated lights were used. A 3J solar cell fabricated with an anti-reflected coating was also evaluated. Measured results reveal that an overall short-circuit current of 13.5 mA/cm 2 is still limited by the InGaP-subcell, resulting in a conversion efficiency of 27%. Together with determined short-circuit current of 15.5 mA/cm 2 for the InGaAs-subcell, a possible optimum conversion efficiency of 29.11% is expected.</description><subject>Absorption</subject><subject>Circuits</subject><subject>Conversion</subject><subject>Current measurement</subject><subject>current-match</subject><subject>Energy conversion efficiency</subject><subject>Gallium indium phosphide</subject><subject>Inspection</subject><subject>multijunction</subject><subject>Nondestructive testing</subject><subject>Photonic band gap</subject><subject>Photovoltaic cells</subject><subject>quantum efficiency</subject><subject>Short circuit currents</subject><subject>solar cell</subject><subject>Solar cells</subject><subject>subcell</subject><subject>Temperature measurement</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNUclOwzAQjRBIVNAPQFwicU7xOI6XIwoFilo4FM6W66UkCnFxnEr8PemiirnM6OnNm-UlyQ2gCQAS96_Tx-UEIxATLAgpGJwlIwyUZ5Tl5PxffZmMu65GQ3CggtJRMn_zrbFdDL2O1dam061qehUr36bepYu-iVXdt3oPLH2jQlrapulS50O6UFF_Ve06LfsQbBu76-TCqaaz42O-Sj6fph_lSzZ_f56VD_NME4RjVuSIcESMNoQorgRlBIsVpwo4WGYKoozLCQPBgVgnrLPCWS7cSmBFEDX5VTI76BqvarkJ1bcKv9KrSu4BH9ZShVjpxkrmMNWMCoMKRXLBFDamGF6xAiOAaTpo3R20NsH_9MMnZO370A7rS5wjhoEgXgwsOLB08F0XrDtNBSR3HsidB3LngTx6MPTcHnoqa-2Jz3kxXAv5H42EgYA</recordid><startdate>2019</startdate><enddate>2019</enddate><creator>Huang, Chia-Hua</creator><creator>Lo, Hao</creator><creator>Lo, Chieh</creator><creator>Hsu, Chia-Chieh</creator><creator>Lour, Wen-Shiung</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Various compensated lights were employed to determine key CMMR of InGaP-InGaAs-Ge related triple-junction (3J) solar cells. When a 405 nm compensated light is used, short-circuit currents of 9.37 mA/cm 2 and 10.28 mA/cm 2 were determined for the InGaP-subcell and InGaAs-subcell, respectively, resulting in a CMMR of 4.4%. Excellent agreement in evaluated properties was obtained when a 532 nm, a 638 nm, and 808 nm compensated lights were used. A 3J solar cell fabricated with an anti-reflected coating was also evaluated. Measured results reveal that an overall short-circuit current of 13.5 mA/cm 2 is still limited by the InGaP-subcell, resulting in a conversion efficiency of 27%. Together with determined short-circuit current of 15.5 mA/cm 2 for the InGaAs-subcell, a possible optimum conversion efficiency of 29.11% is expected.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JEDS.2019.2944571</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0001-9127-1874</orcidid><orcidid>https://orcid.org/0000-0002-6914-1085</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Absorption Circuits Conversion Current measurement current-match Energy conversion efficiency Gallium indium phosphide Inspection multijunction Nondestructive testing Photonic band gap Photovoltaic cells quantum efficiency Short circuit currents solar cell Solar cells subcell Temperature measurement |
| title | Nondestructive Evaluation of Multijunction Solar Cells for Matching Currents |
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