Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Extreme environments such as the Venus atmosphere are among the emerging applications that demand electronics that can withstand high-temperature oxidizing conditions. While wide-bandgap technologies for integrated electronics have been developed so far, they either suffer from gate oxide and thresh...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2019, Vol.7, p.931-935
Hauptverfasser:	Kargarrazi, Saleh, Yalamarthy, Ananth Saran, Satterthwaite, Peter F., Blankenberg, Scott William, Chapin, Caitlin, Senesky, Debbie G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Analog circuits Burn-in Circuit design Degradation Electron mobility Electronics Extreme environments Gallium nitride (GaN) HEMTs high electron mobility transistor (HEMT) High electron mobility transistors High temperature high-temperature electronics MODFETs Oxidation Power supplies Semiconductor devices Temperature Temperature measurement Threshold voltage Transconductance Venus atmosphere Wide band gap semiconductors
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