On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes
Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are associated with temperature dependent dynamic RON transients analysis to identify the parasitic trapping lo...
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| Veröffentlicht in: | IEEE journal of the Electron Devices Society 2018-01, Vol.6, p.956-964 |
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| container_title | IEEE journal of the Electron Devices Society |
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| creator | Lorin, Thomas Ghibaudo, G. Gaillard, F. Vandendaele, William Gwoziecki, Romain Baines, Yannick Biscarrat, Jerome Jaud, Marie-Anne Gillot, Charlotte Charles, Matthew Plissonnier, Marc |
| description | Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are associated with temperature dependent dynamic RON transients analysis to identify the parasitic trapping locations in the devices. We show here that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related trap in the GaN buffer layers (E A = E T - E V ≃ 0.9 eV) that can be studied independently by using the appropriate stress configurations. These two parasitic effects can lead to long recovery time (>1 ks) after reverse bias stress. |
| doi_str_mv | 10.1109/JEDS.2018.2842100 |
| format | Article |
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Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are associated with temperature dependent dynamic RON transients analysis to identify the parasitic trapping locations in the devices. We show here that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related trap in the GaN buffer layers (E A = E T - E V ≃ 0.9 eV) that can be studied independently by using the appropriate stress configurations. These two parasitic effects can lead to long recovery time (>1 ks) after reverse bias stress.</description><identifier>ISSN: 2168-6734</identifier><identifier>EISSN: 2168-6734</identifier><identifier>DOI: 10.1109/JEDS.2018.2842100</identifier><identifier>CODEN: IJEDAC</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>AlGaN/GaN ; Buffer layers ; Capacitance ; Capacitance measurement ; Cathodes ; Collapse ; Current measurement ; dynamic ron ; Engineering Sciences ; field plates ; gallium nitride ; Gallium nitrides ; gated Van der Pauw ; Logic gates ; Micro and nanotechnologies ; Microelectronics ; Power semiconductor devices ; Recovery time ; Schottky diodes ; Stress ; Temperature dependence ; Temperature measurement ; test structures ; Trapping ; trapping dynamics</subject><ispartof>IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.956-964</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c436t-c0713d82f73cf787535596765954305e027c10ce3a27b204d949c7deaffd247a3</citedby><cites>FETCH-LOGICAL-c436t-c0713d82f73cf787535596765954305e027c10ce3a27b204d949c7deaffd247a3</cites><orcidid>0000-0002-7914-1740 ; 0000-0002-8952-4227 ; 0000-0003-0668-8865 ; 0000-0001-9901-0679</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8371232$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>230,314,780,784,864,885,2102,27633,27924,27925,54933</link.rule.ids><backlink>$$Uhttps://hal.science/hal-01948024$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Lorin, Thomas</creatorcontrib><creatorcontrib>Ghibaudo, G.</creatorcontrib><creatorcontrib>Gaillard, F.</creatorcontrib><creatorcontrib>Vandendaele, William</creatorcontrib><creatorcontrib>Gwoziecki, Romain</creatorcontrib><creatorcontrib>Baines, Yannick</creatorcontrib><creatorcontrib>Biscarrat, Jerome</creatorcontrib><creatorcontrib>Jaud, Marie-Anne</creatorcontrib><creatorcontrib>Gillot, Charlotte</creatorcontrib><creatorcontrib>Charles, Matthew</creatorcontrib><creatorcontrib>Plissonnier, Marc</creatorcontrib><title>On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes</title><title>IEEE journal of the Electron Devices Society</title><addtitle>JEDS</addtitle><description>Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are associated with temperature dependent dynamic RON transients analysis to identify the parasitic trapping locations in the devices. We show here that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related trap in the GaN buffer layers (E A = E T - E V ≃ 0.9 eV) that can be studied independently by using the appropriate stress configurations. These two parasitic effects can lead to long recovery time (>1 ks) after reverse bias stress.</description><subject>AlGaN/GaN</subject><subject>Buffer layers</subject><subject>Capacitance</subject><subject>Capacitance measurement</subject><subject>Cathodes</subject><subject>Collapse</subject><subject>Current measurement</subject><subject>dynamic ron</subject><subject>Engineering Sciences</subject><subject>field plates</subject><subject>gallium nitride</subject><subject>Gallium nitrides</subject><subject>gated Van der Pauw</subject><subject>Logic gates</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Power semiconductor devices</subject><subject>Recovery time</subject><subject>Schottky diodes</subject><subject>Stress</subject><subject>Temperature dependence</subject><subject>Temperature measurement</subject><subject>test structures</subject><subject>Trapping</subject><subject>trapping dynamics</subject><issn>2168-6734</issn><issn>2168-6734</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpVkc1qGzEUhYfSQkOaByjdCLrqYlxdSaOfZXDc_GAaqOO1UKSreFx35EpKIW_fmU4IqTYSV9_54HKa5iPQBQA1X29WF5sFo6AXTAsGlL5pThhI3UrFxdtX7_fNWSl7Oh4N0kh50mxvB1J3SLZDwFyqG0I_PJAUydLVXQpIfuDBVQzkLrvjcfpbxYi-FtIP5NJ9b9PQbnqy8btU688nctGPofKheRfdoeDZ833abL-t7pZX7fr28np5vm694LK2nirgQbOouI9Kq453nZFKdqYTnHZImfJAPXLH1D2jIhhhvAroYgxMKMdPm-vZG5Lb22Puf7n8ZJPr7b9Byg_W5dr7A1qjxzhKbhiNQop7F0JAHZBxVGAgjK4vs2vnDv-prs7XdppRMEJTJv7AyH6e2WNOvx-xVLtPj3kYV7WMGQPMgJ4omCmfUykZ44sWqJ2Ks1NxdirOPhc3Zj7NmR4RX3jNFTDO-F8cgpB0</recordid><startdate>20180101</startdate><enddate>20180101</enddate><creator>Lorin, Thomas</creator><creator>Ghibaudo, G.</creator><creator>Gaillard, F.</creator><creator>Vandendaele, William</creator><creator>Gwoziecki, Romain</creator><creator>Baines, Yannick</creator><creator>Biscarrat, Jerome</creator><creator>Jaud, Marie-Anne</creator><creator>Gillot, Charlotte</creator><creator>Charles, Matthew</creator><creator>Plissonnier, Marc</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><general>IEEE Electron Devices Society</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>1XC</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-7914-1740</orcidid><orcidid>https://orcid.org/0000-0002-8952-4227</orcidid><orcidid>https://orcid.org/0000-0003-0668-8865</orcidid><orcidid>https://orcid.org/0000-0001-9901-0679</orcidid></search><sort><creationdate>20180101</creationdate><title>On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes</title><author>Lorin, Thomas ; Ghibaudo, G. ; Gaillard, F. ; Vandendaele, William ; Gwoziecki, Romain ; Baines, Yannick ; Biscarrat, Jerome ; Jaud, Marie-Anne ; Gillot, Charlotte ; Charles, Matthew ; Plissonnier, Marc</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c436t-c0713d82f73cf787535596765954305e027c10ce3a27b204d949c7deaffd247a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>AlGaN/GaN</topic><topic>Buffer layers</topic><topic>Capacitance</topic><topic>Capacitance measurement</topic><topic>Cathodes</topic><topic>Collapse</topic><topic>Current measurement</topic><topic>dynamic ron</topic><topic>Engineering Sciences</topic><topic>field plates</topic><topic>gallium nitride</topic><topic>Gallium nitrides</topic><topic>gated Van der Pauw</topic><topic>Logic gates</topic><topic>Micro and nanotechnologies</topic><topic>Microelectronics</topic><topic>Power semiconductor devices</topic><topic>Recovery time</topic><topic>Schottky diodes</topic><topic>Stress</topic><topic>Temperature dependence</topic><topic>Temperature measurement</topic><topic>test structures</topic><topic>Trapping</topic><topic>trapping dynamics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lorin, Thomas</creatorcontrib><creatorcontrib>Ghibaudo, G.</creatorcontrib><creatorcontrib>Gaillard, F.</creatorcontrib><creatorcontrib>Vandendaele, William</creatorcontrib><creatorcontrib>Gwoziecki, Romain</creatorcontrib><creatorcontrib>Baines, Yannick</creatorcontrib><creatorcontrib>Biscarrat, Jerome</creatorcontrib><creatorcontrib>Jaud, Marie-Anne</creatorcontrib><creatorcontrib>Gillot, Charlotte</creatorcontrib><creatorcontrib>Charles, Matthew</creatorcontrib><creatorcontrib>Plissonnier, Marc</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Hyper Article en Ligne (HAL)</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>IEEE journal of the Electron Devices Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lorin, Thomas</au><au>Ghibaudo, G.</au><au>Gaillard, F.</au><au>Vandendaele, William</au><au>Gwoziecki, Romain</au><au>Baines, Yannick</au><au>Biscarrat, Jerome</au><au>Jaud, Marie-Anne</au><au>Gillot, Charlotte</au><au>Charles, Matthew</au><au>Plissonnier, Marc</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes</atitle><jtitle>IEEE journal of the Electron Devices Society</jtitle><stitle>JEDS</stitle><date>2018-01-01</date><risdate>2018</risdate><volume>6</volume><spage>956</spage><epage>964</epage><pages>956-964</pages><issn>2168-6734</issn><eissn>2168-6734</eissn><coden>IJEDAC</coden><abstract>Cathode related current collapse effect in GaN on Si Schottky barrier diodes is investigated in this paper. Capacitance and current relaxation measurements on diodes and gated-Van Der Pauw are associated with temperature dependent dynamic RON transients analysis to identify the parasitic trapping locations in the devices. We show here that the main part of the current collapse at the cathode comes from a combination of electron trapping in the passivation layer and in a carbon related trap in the GaN buffer layers (E A = E T - E V ≃ 0.9 eV) that can be studied independently by using the appropriate stress configurations. These two parasitic effects can lead to long recovery time (>1 ks) after reverse bias stress.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JEDS.2018.2842100</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-7914-1740</orcidid><orcidid>https://orcid.org/0000-0002-8952-4227</orcidid><orcidid>https://orcid.org/0000-0003-0668-8865</orcidid><orcidid>https://orcid.org/0000-0001-9901-0679</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | AlGaN/GaN Buffer layers Capacitance Capacitance measurement Cathodes Collapse Current measurement dynamic ron Engineering Sciences field plates gallium nitride Gallium nitrides gated Van der Pauw Logic gates Micro and nanotechnologies Microelectronics Power semiconductor devices Recovery time Schottky diodes Stress Temperature dependence Temperature measurement test structures Trapping trapping dynamics |
| title | On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes |
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