Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer

Structural and electrical characteristics of epitaxial germanium (Ge) heterogeneously integrated on silicon (Si) via a composite, large bandgap AlAs/GaAs buffer are investigated. Electrical characteristics of N-type metal-oxide-semiconductor (MOS) capacitors, fabricated from the aforementioned mater...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2015-07, Vol.3 (4), p.341-348
Hauptverfasser:	Nguyen, Peter D., Clavel, Michael Brian, Goley, Patrick S., Jheng-Sin Liu, Allen, Noah P., Guido, Louis J., Hudait, Mantu K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Capacitance-voltage characteristics Epitaxial growth Gallium arsenide Germanium heteroepitaxy III-V materials metal oxide semiconductor (MOS) devices Photonic band gap Silicon Substrates
Online-Zugang:	Volltext
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