Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950-1650 nm wavelength sensing applications. The APD is grown by molecular beam epitaxy on InP substrates from lattice-matched InGaAs and InAlAs alloys. Avalanche multiplication inside the APD occurs in a series...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2013-02, Vol.1 (2), p.54-65
Hauptverfasser:	Williams, George M., Compton, Madison, Ramirez, David A., Hayat, Majeed M., Huntington, Andrew S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche photodiode Avalanche photodiodes Gain measurement Metals Noise reduction optical receiver Performance evaluation photo detector photon counting Semiconductor device measurement Temperature measurement
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