Mixed-Mode Simulation of Nanowire Ge/GaAs Heterojunction Tunneling Field-Effect Transistor for Circuit Applications

In this paper, a nanowire germanium/gallium arsenide (Ge/GaAs) heterojunction-based tunneling field-effect transistor (TFET) is investigated, with an emphasis on the device-circuit interaction. It is applied to a common-source (CS) amplifier, one of the most fundamental analog circuit blocks, and it...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2013-02, Vol.1 (2), p.48-53
Hauptverfasser:	Seongjae Cho, Hyungjin Kim, Heesauk Jhon, In Man Kang, Byung-Gook Park, Harris, J. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	analog circuit device-circuit interaction Heterojunction high-frequency mixed-mode simulation transfer function tunneling field-effect transistor (TFET)
Online-Zugang:	Volltext
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