On the Performance and Scaling of Symmetric Lateral Bipolar Transistors on SOI

The performance potential and scaling characteristics of thin-base SOI symmetric lateral bipolar transistors were examined using 1-D analytic equations for the currents and capacitances. The device can operate at collector current densities >100 mA/μm 2 , and it scales similarly to CMOS in terms...

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Veröffentlicht in:	IEEE journal of the Electron Devices Society 2013-01, Vol.1 (1), p.21-27
Hauptverfasser:	Ning, T. H., Jin Cai
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar transistors Capacitance CMOS integrated circuits complementary bipolar transistors lateral bipolar transistors Mathematical model Performance evaluation Silicon on insulator technology SOI devices Transistors
Online-Zugang:	Volltext
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