Performance Enhancement of Blue Light-Emitting Diodes With an Undoped AlGaN Electron-Blocking Layer in the Active Region
Optical performances of blue InGaN light-emitting diodes (LEDs) with an undoped AlGaN electron-blocking layer (U-AlGaN EBL) embedded in the active region are investigated numerically. As a benefit of this special structural design, the electrons would spill over the EBL and recombine with the holes...
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| Veröffentlicht in: | Journal of display technology 2016-06, Vol.12 (6), p.573-576 |
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| container_title | Journal of display technology |
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| creator | Zhang, Zhuding Sun, Huiqing Li, Xuna Sun, Hao Zhang, Cheng Fan, Xuancong Guo, Zhiyou |
| description | Optical performances of blue InGaN light-emitting diodes (LEDs) with an undoped AlGaN electron-blocking layer (U-AlGaN EBL) embedded in the active region are investigated numerically. As a benefit of this special structural design, the electrons would spill over the EBL and recombine with the holes in the wells close to the p-side. Moreover, holes in the wells that are close to the n-side increase to a higher concentration due to the presence of a new shallow potential well in the valence band. The simulation results indicate that the LEDs with U-AlGaN EBL has higher internal quantum efficiency as well as light output power compared with the conventional single p-type AlGaN EBL structure. These improvements are primarily contributed to the enhancement on electrons confinement and holes injection. |
| doi_str_mv | 10.1109/JDT.2015.2509001 |
| format | Article |
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As a benefit of this special structural design, the electrons would spill over the EBL and recombine with the holes in the wells close to the p-side. Moreover, holes in the wells that are close to the n-side increase to a higher concentration due to the presence of a new shallow potential well in the valence band. The simulation results indicate that the LEDs with U-AlGaN EBL has higher internal quantum efficiency as well as light output power compared with the conventional single p-type AlGaN EBL structure. These improvements are primarily contributed to the enhancement on electrons confinement and holes injection.</description><identifier>ISSN: 1551-319X</identifier><identifier>EISSN: 1558-9323</identifier><identifier>DOI: 10.1109/JDT.2015.2509001</identifier><identifier>CODEN: IJDTAL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aluminum gallium nitride ; Aluminum gallium nitrides ; Charge carrier processes ; Confinement ; Display devices ; efficiency droop ; Electric potential ; electron blocking layer ; Indium gallium nitrides ; Light emitting diodes ; Radiative recombination ; Simulation ; Spills ; U-AlGaN ; Wells ; Wide band gap semiconductors</subject><ispartof>Journal of display technology, 2016-06, Vol.12 (6), p.573-576</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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As a benefit of this special structural design, the electrons would spill over the EBL and recombine with the holes in the wells close to the p-side. Moreover, holes in the wells that are close to the n-side increase to a higher concentration due to the presence of a new shallow potential well in the valence band. The simulation results indicate that the LEDs with U-AlGaN EBL has higher internal quantum efficiency as well as light output power compared with the conventional single p-type AlGaN EBL structure. 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| subjects | Aluminum gallium nitride Aluminum gallium nitrides Charge carrier processes Confinement Display devices efficiency droop Electric potential electron blocking layer Indium gallium nitrides Light emitting diodes Radiative recombination Simulation Spills U-AlGaN Wells Wide band gap semiconductors |
| title | Performance Enhancement of Blue Light-Emitting Diodes With an Undoped AlGaN Electron-Blocking Layer in the Active Region |
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