Electron Confinement and Hole Injection Improvement in InGaN/GaN Light-Emitting Diodes With Graded-Composition Last Quantum Barrier and Without Electron Blocking Layer

The highly magnesium (Mg)-doped wide-bandgap AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron leakage suppression. However, the EBL also reduces the hole injection efficiency and high Mg doping in AlGaN is a challenging. In this work, InGaN/Ga...

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Veröffentlicht in:	Journal of display technology 2015-09, Vol.11 (9), p.753-758
Hauptverfasser:	Cheng, Liwen, Wu, Shudong, Chen, Haitao, Gong, Daoren, Wei, Yuefeng
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Charge carrier processes Doping efficiency droop Electric potential Gallium nitride InGaN Light emitting diodes light-emitting diodes (LEDs) quantum-well devices Radiative recombination
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