An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate

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Veröffentlicht in:	IEEE electron device letters 1982-06, Vol.3 (6), p.158-160
Hauptverfasser:	Liao, A.S.H., Tell, B., Leheny, R.F., Nahory, R.E., DeWinter, J.C., Martin, R.J.
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title	An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate
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