A new low-voltage Si-compatible electroluminescent device
Thin film direct-current electroluminescent devices with ZnS:Mn as the active light-emitting layer have been fabricated on Si wafers. The devices incorporate a high-efficiency electron injector layer capable of passing high current densities (>10 -2 A cm -2 dc) through the active layer. A useful...
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| Veröffentlicht in: | IEEE electron device letters 1982-06, Vol.3 (6), p.148-151 |
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| container_end_page | 151 |
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| container_title | IEEE electron device letters |
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| creator | Robbins, D.J. Falcony, C. DiMaria, D.J. Dong, D.W. DeGelormo, J.F. Chang, I.F. Dove, D.B. |
| description | Thin film direct-current electroluminescent devices with ZnS:Mn as the active light-emitting layer have been fabricated on Si wafers. The devices incorporate a high-efficiency electron injector layer capable of passing high current densities (>10 -2 A cm -2 dc) through the active layer. A useful luminance of 78 fL has been achieved at 48V, significantly lower voltage than for conventional ac thin film or dc powder electroluminescent devices. The structure also includes a potential energy step at the interface between SiO 2 and ZnS due to the difference in electron affinities which offers the possibility of hot electron injection into the active layer. The unique combination of efficient cathode emission and hot injection possible in these devices suggests that a solid state analogue of the cathode ray tube may be realizable. |
| doi_str_mv | 10.1109/EDL.1982.25518 |
| format | Article |
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The devices incorporate a high-efficiency electron injector layer capable of passing high current densities (>10 -2 A cm -2 dc) through the active layer. A useful luminance of 78 fL has been achieved at 48V, significantly lower voltage than for conventional ac thin film or dc powder electroluminescent devices. The structure also includes a potential energy step at the interface between SiO 2 and ZnS due to the difference in electron affinities which offers the possibility of hot electron injection into the active layer. The unique combination of efficient cathode emission and hot injection possible in these devices suggests that a solid state analogue of the cathode ray tube may be realizable.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/EDL.1982.25518</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Cathodes ; Current density ; Electroluminescent devices ; Potential energy ; Powders ; Secondary generated hot electron injection ; Semiconductor thin films ; Thin film devices ; Voltage ; Zinc compounds</subject><ispartof>IEEE electron device letters, 1982-06, Vol.3 (6), p.148-151</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-f5e1403dd9de21f008298d111cedc5fbcaf94f74c197899cfd55ce7ba34a50bf3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1482623$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1482623$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Robbins, D.J.</creatorcontrib><creatorcontrib>Falcony, C.</creatorcontrib><creatorcontrib>DiMaria, D.J.</creatorcontrib><creatorcontrib>Dong, D.W.</creatorcontrib><creatorcontrib>DeGelormo, J.F.</creatorcontrib><creatorcontrib>Chang, I.F.</creatorcontrib><creatorcontrib>Dove, D.B.</creatorcontrib><title>A new low-voltage Si-compatible electroluminescent device</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>Thin film direct-current electroluminescent devices with ZnS:Mn as the active light-emitting layer have been fabricated on Si wafers. The devices incorporate a high-efficiency electron injector layer capable of passing high current densities (>10 -2 A cm -2 dc) through the active layer. A useful luminance of 78 fL has been achieved at 48V, significantly lower voltage than for conventional ac thin film or dc powder electroluminescent devices. The structure also includes a potential energy step at the interface between SiO 2 and ZnS due to the difference in electron affinities which offers the possibility of hot electron injection into the active layer. The unique combination of efficient cathode emission and hot injection possible in these devices suggests that a solid state analogue of the cathode ray tube may be realizable.</description><subject>Cathodes</subject><subject>Current density</subject><subject>Electroluminescent devices</subject><subject>Potential energy</subject><subject>Powders</subject><subject>Secondary generated hot electron injection</subject><subject>Semiconductor thin films</subject><subject>Thin film devices</subject><subject>Voltage</subject><subject>Zinc compounds</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1982</creationdate><recordtype>article</recordtype><recordid>eNqN0D1PwzAQgGELgUQprCwsmdgSfP5I7LEq5UOqxADMluOcUZCTlDhpxb8npUiMMN3y3On0EnIJNAOg-mZ1u85AK5YxKUEdkRlIqVIqc35MZrQQkHKg-Sk5i_GdUhCiEDOiF0mLuyR0u3TbhcG-YfJcp65rNnaoy4AJBnRD34WxqVuMDtshqXBbOzwnJ96GiBc_c05e71Yvy4d0_XT_uFysU8clHVIvEQTlVaUrZOApVUyrCgAcVk760lmvhS-EA10orZ2vpHRYlJYLK2np-ZxcH-5u-u5jxDiYpp7-CMG22I3RMFXkkmv9D7hnOv8bcglM0WKC2QG6vouxR282fd3Y_tMANfvmZmpu9s3Nd_Np4eqwUCPiLxaK5YzzL9VgfO8</recordid><startdate>19820601</startdate><enddate>19820601</enddate><creator>Robbins, D.J.</creator><creator>Falcony, C.</creator><creator>DiMaria, D.J.</creator><creator>Dong, D.W.</creator><creator>DeGelormo, J.F.</creator><creator>Chang, I.F.</creator><creator>Dove, D.B.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>JG9</scope></search><sort><creationdate>19820601</creationdate><title>A new low-voltage Si-compatible electroluminescent device</title><author>Robbins, D.J. ; Falcony, C. ; DiMaria, D.J. ; Dong, D.W. ; DeGelormo, J.F. ; Chang, I.F. ; Dove, D.B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-f5e1403dd9de21f008298d111cedc5fbcaf94f74c197899cfd55ce7ba34a50bf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1982</creationdate><topic>Cathodes</topic><topic>Current density</topic><topic>Electroluminescent devices</topic><topic>Potential energy</topic><topic>Powders</topic><topic>Secondary generated hot electron injection</topic><topic>Semiconductor thin films</topic><topic>Thin film devices</topic><topic>Voltage</topic><topic>Zinc compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Robbins, D.J.</creatorcontrib><creatorcontrib>Falcony, C.</creatorcontrib><creatorcontrib>DiMaria, D.J.</creatorcontrib><creatorcontrib>Dong, D.W.</creatorcontrib><creatorcontrib>DeGelormo, J.F.</creatorcontrib><creatorcontrib>Chang, I.F.</creatorcontrib><creatorcontrib>Dove, D.B.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Robbins, D.J.</au><au>Falcony, C.</au><au>DiMaria, D.J.</au><au>Dong, D.W.</au><au>DeGelormo, J.F.</au><au>Chang, I.F.</au><au>Dove, D.B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A new low-voltage Si-compatible electroluminescent device</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1982-06-01</date><risdate>1982</risdate><volume>3</volume><issue>6</issue><spage>148</spage><epage>151</epage><pages>148-151</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>Thin film direct-current electroluminescent devices with ZnS:Mn as the active light-emitting layer have been fabricated on Si wafers. The devices incorporate a high-efficiency electron injector layer capable of passing high current densities (>10 -2 A cm -2 dc) through the active layer. A useful luminance of 78 fL has been achieved at 48V, significantly lower voltage than for conventional ac thin film or dc powder electroluminescent devices. The structure also includes a potential energy step at the interface between SiO 2 and ZnS due to the difference in electron affinities which offers the possibility of hot electron injection into the active layer. The unique combination of efficient cathode emission and hot injection possible in these devices suggests that a solid state analogue of the cathode ray tube may be realizable.</abstract><pub>IEEE</pub><doi>10.1109/EDL.1982.25518</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1982-06, Vol.3 (6), p.148-151 |
| issn | 0741-3106 1558-0563 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Cathodes Current density Electroluminescent devices Potential energy Powders Secondary generated hot electron injection Semiconductor thin films Thin film devices Voltage Zinc compounds |
| title | A new low-voltage Si-compatible electroluminescent device |
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