GaAs Shallow-homojunction solar cells on Ge-coated Si substrates

Solar cells with conversion efficiencies of 12% (AM1) have been fabricated from single-crystal GaAs epilayers grown by CVD on Ge-coated Si substrates. The cells utilize an n + /p/p + shallow-homo junction GaAs structure on a thin (

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Electron Device Lett.; (United States) 1981-07, Vol.2 (7), p.169-171
Hauptverfasser:	Gale, R.P., Fan, J.C.C., Tsaur, B.-Y., Turner, G.W., Davis, F.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	140501 - Solar Energy Conversion- Photovoltaic Conversion CHEMICAL COATING CHEMICAL VAPOR DEPOSITION Circuits Costs CRYSTALS DEPOSITION DIRECT ENERGY CONVERTERS ELEMENTS EPITAXY Fabrication Gallium arsenide GALLIUM ARSENIDE SOLAR CELLS GERMANIUM HOMOJUNCTIONS JUNCTIONS Lattices METALS MONOCRYSTALS PHOTOELECTRIC CELLS PHOTOVOLTAIC CELLS SEMICONDUCTOR JUNCTIONS SEMIMETALS Sheet materials SILICON SOLAR CELLS SOLAR ENERGY SOLAR EQUIPMENT Substrates SURFACE COATING Voltage
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Solar cells with conversion efficiencies of 12% (AM1) have been fabricated from single-crystal GaAs epilayers grown by CVD on Ge-coated Si substrates. The cells utilize an n + /p/p + shallow-homo junction GaAs structure on a thin (
ISSN:	0741-3106 1558-0563
DOI:	10.1109/EDL.1981.25386