A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line
A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics usin...
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| Veröffentlicht in: | IEEE access 2022, Vol.10, p.93894-93900 |
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| creator | Lee, Sunwoo Kim, Wansik Kim, Sosu Kim, Min-Su Kim, Junghyun |
| description | A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics using low-characteristic impedance transmission lines and an optimized microstrip-coupled line. In particular, the microstrip-coupled line provides strong resonance at the desired frequency, enabling optimal conjugate impedance matching of both edge and intermediate frequencies simultaneously. The implemented W-band three-stage amplifier using the proposed interstage matching technique exhibited a small-signal gain above 14.1 dB from 75 to 103 GHz. Also, the output power between 92-100 GHz was greater than 25 dBm, and the maximum output power at 96 GHz was 25.8 dBm. The W-band amplifier was designed with an area of 2 mm \times1.2 mm. |
| doi_str_mv | 10.1109/ACCESS.2022.3203190 |
| format | Article |
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The proposed interstage matching network is designed as a two-pole conjugated impedance matching approach for wideband characteristics using low-characteristic impedance transmission lines and an optimized microstrip-coupled line. In particular, the microstrip-coupled line provides strong resonance at the desired frequency, enabling optimal conjugate impedance matching of both edge and intermediate frequencies simultaneously. The implemented W-band three-stage amplifier using the proposed interstage matching technique exhibited a small-signal gain above 14.1 dB from 75 to 103 GHz. Also, the output power between 92-100 GHz was greater than 25 dBm, and the maximum output power at 96 GHz was 25.8 dBm. The W-band amplifier was designed with an area of 2 mm <inline-formula> <tex-math notation="LaTeX">\times1.2 </tex-math></inline-formula> mm.</description><identifier>ISSN: 2169-3536</identifier><identifier>EISSN: 2169-3536</identifier><identifier>DOI: 10.1109/ACCESS.2022.3203190</identifier><identifier>CODEN: IAECCG</identifier><language>eng</language><publisher>Piscataway: IEEE</publisher><subject>Amplification ; Amplifier ; Amplifier design ; Amplifiers ; GaN-on-silicon ; HEMTs ; Impedance ; Impedance matching ; interstage matching technique ; low-characteristic impedance transmission line ; Microstrip ; microstrip-coupled line ; MIM capacitors ; MODFETs ; Resonance ; Transistors ; Transmission lines ; W-band</subject><ispartof>IEEE access, 2022, Vol.10, p.93894-93900</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2022</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c408t-5147fec81183bde308de35880a59bd1f355163ab7533bae879099e7c95c2f7923</citedby><cites>FETCH-LOGICAL-c408t-5147fec81183bde308de35880a59bd1f355163ab7533bae879099e7c95c2f7923</cites><orcidid>0000-0001-7645-8702 ; 0000-0001-9424-3377 ; 0000-0002-1110-7896 ; 0000-0002-7566-5408</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9870800$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,860,2096,4010,27610,27900,27901,27902,54908</link.rule.ids></links><search><creatorcontrib>Lee, Sunwoo</creatorcontrib><creatorcontrib>Kim, Wansik</creatorcontrib><creatorcontrib>Kim, Sosu</creatorcontrib><creatorcontrib>Kim, Min-Su</creatorcontrib><creatorcontrib>Kim, Junghyun</creatorcontrib><title>A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line</title><title>IEEE access</title><addtitle>Access</addtitle><description>A new interstage matching technique is presented for design of a wide-band multi-stage amplifier using commercial 60 nm GaN-on-silicon technology in the W-band. 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The W-band amplifier was designed with an area of 2 mm <inline-formula> <tex-math notation="LaTeX">\times1.2 </tex-math></inline-formula> mm.</description><subject>Amplification</subject><subject>Amplifier</subject><subject>Amplifier design</subject><subject>Amplifiers</subject><subject>GaN-on-silicon</subject><subject>HEMTs</subject><subject>Impedance</subject><subject>Impedance matching</subject><subject>interstage matching technique</subject><subject>low-characteristic impedance transmission line</subject><subject>Microstrip</subject><subject>microstrip-coupled line</subject><subject>MIM capacitors</subject><subject>MODFETs</subject><subject>Resonance</subject><subject>Transistors</subject><subject>Transmission lines</subject><subject>W-band</subject><issn>2169-3536</issn><issn>2169-3536</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpNUU1P4zAQjRArgVh-ARdLe07xRxzbx27EQqUC0hbE0XKccesqxFk7FeLf424QYg6eD8974_EriiuCF4Rgdb1smpvNZkExpQtGMSMKnxTnlNSqZJzVp9_is-IypT3OJnOJi_PibYleyt9m6NDydey98xDRi592yKAHeMthB_P1apggpslsAd2bye78sEVPYHeD_3cA9JyO-QZ6V_6FFAYzWEDBZZZ7b2NIU_Rj2YTD2EOH1n6An8UPZ_oEl5_-onj-c_PU3JXrx9tVs1yXtsJyKjmphAMrCZGs7YBhmQ8uJTZctR1xjHNSM9MKzlhrQAqFlQJhFbfUCUXZRbGaebtg9nqM_tXEdx2M1_8LIW61iZO3PWhuOFWs5lg6VpEKpLGVwLarq7aSLeky16-Za4whL50mvQ-HOOTnaypIpfKvSpG72Nx13DtFcF9TCdZHwfQsmD4Kpj8Fy6irGeUB4AuhpMASY_YBXkuPXw</recordid><startdate>2022</startdate><enddate>2022</enddate><creator>Lee, Sunwoo</creator><creator>Kim, Wansik</creator><creator>Kim, Sosu</creator><creator>Kim, Min-Su</creator><creator>Kim, Junghyun</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| source | IEEE Open Access Journals; DOAJ Directory of Open Access Journals; EZB-FREE-00999 freely available EZB journals |
| subjects | Amplification Amplifier Amplifier design Amplifiers GaN-on-silicon HEMTs Impedance Impedance matching interstage matching technique low-characteristic impedance transmission line Microstrip microstrip-coupled line MIM capacitors MODFETs Resonance Transistors Transmission lines W-band |
| title | A W-Band Amplifier With a New Wide-Band Interstage Matching Technique Using Self-Resonance of a Microstrip-Coupled Line |
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