A V-Band Integrated Receiver Front-End Based on 0.15 μm GaAs pHEMT Process for Passive Millimeter-Wave Imaging

The design, analysis, implementation and measurement of an integrated V-band receiver front-end based on 0.15~\mu \text{m} GaAs pHEMT process are presented in this paper. The front-end chip uses the super-heterodyne topology which consists of a low noise amplifier, an image reject mixer, and a mul...

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Veröffentlicht in:	IEEE access 2022, Vol.10, p.59933-59941
Hauptverfasser:	Gong, Jianhao, Chen, Xi, He, Wangdong, Altaf, Amjad, Hu, Anyong, Miao, Jungang
Format:	Artikel
Sprache:	eng
Schlagworte:	015 <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">μ m GaAs pHEMT Broadband Chains Circuits Coupling Couplings Frequency ranges Gain Gallium arsenide high image rejection Image enhancement Integrated receiver front-end low LO power Low noise Millimeter waves Mixers Noise levels Passive imaging Passive millimeter wave imaging Phase control PHEMTs Power consumption Quadratures Radio frequency Receivers Rejection Topology V-band
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