An 0.4-2.8 GHz CMOS Power Amplifier With On-Chip Broadband-Pre-Distorter (BPD) Achieving 36.1-38.6% PAE and 21 dBm Maximum Linear Output Power

A broadband 180 nm CMOS power amplifier (PA) operating from a frequency bandwidth of 400 MHz to 2.8 GHz is presented in this paper. The PA is integrated with an inductor-less Broadband-Pre-Distorter (BPD) to enhance its linearity for wide bandwidth. The BPD consists only of MOS transistors, resistor...

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Veröffentlicht in:	IEEE access 2021, Vol.9, p.48831-48840
Hauptverfasser:	Mariappan, Selvakumar, Rajendran, Jagadheswaran, Yusof, Yusman M., Noh, Norlaili M., Yarman, Binboga Siddik
Format:	Artikel
Sprache:	eng
Schlagworte:	adjacent channel leakage ratio (ACLR) Amplitude modulation amplitude modulation-amplitude modulation (AM-AM) amplitude modulation-phase modulation (AM-PM) Bandwidths Broadband Broadband amplifiers Capacitors CMOS CMOS technology Complementary metal oxide semiconductor (CMOS) Impedance Inductors Linearity MOS devices Phase modulation power added efficiency (PAE) power amplifier (PA) Power amplifiers Power gain Power generation pre-distorter Q factors Resistors transceiver Transistors
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