Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs
Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications. In this paper, we present practical experiments and results of a TRNG imple...
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| Veröffentlicht in: | IEEE access 2019, Vol.7, p.59271-59277 |
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| creator | Ouattara, Frederic Nejat, Arash Torres, Lionel Mackay, Ken |
| description | Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications. In this paper, we present practical experiments and results of a TRNG implemented on magnetic random-access memory (MRAM) dies, fabricated by the thermally-assisted-switching MRAM (TAS-MRAM) technology. We, first, explain how one can find out a heating voltage value using that writing operations in the TAS-MRAM dies have a stochastic behavior. Then, we propose an improvement based on a feedback loop from being generated random bits. It helps to adjust the founded heating voltage value for writing operation with the aim of reaching the maximum entropy. Finally, we report the results of some post-processing methods, which are usually required in TRNGs to successfully pass the statistical test of NIST SP-800. The results show that one can generate random numbers with a high quality of randomness using the proposed TRNGs besides simple post-processing methods. |
| doi_str_mv | 10.1109/ACCESS.2019.2907186 |
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In this paper, we present practical experiments and results of a TRNG implemented on magnetic random-access memory (MRAM) dies, fabricated by the thermally-assisted-switching MRAM (TAS-MRAM) technology. We, first, explain how one can find out a heating voltage value using that writing operations in the TAS-MRAM dies have a stochastic behavior. Then, we propose an improvement based on a feedback loop from being generated random bits. It helps to adjust the founded heating voltage value for writing operation with the aim of reaching the maximum entropy. Finally, we report the results of some post-processing methods, which are usually required in TRNGs to successfully pass the statistical test of NIST SP-800. 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(IEEE) 2019</rights><rights>Distributed under a Creative Commons Attribution 4.0 International License</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c444t-5ce7ae18b370dcdc6167930d5f2d8edf7338d4a9095cb9c14f2c5fb90b8da6543</citedby><cites>FETCH-LOGICAL-c444t-5ce7ae18b370dcdc6167930d5f2d8edf7338d4a9095cb9c14f2c5fb90b8da6543</cites><orcidid>0000-0002-2276-1455 ; 0000-0001-5807-5070</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8713874$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>230,314,780,784,864,885,2102,4024,27633,27923,27924,27925,54933</link.rule.ids><backlink>$$Uhttps://hal-lirmm.ccsd.cnrs.fr/lirmm-02079710$$DView record in HAL$$Hfree_for_read</backlink></links><search><creatorcontrib>Ouattara, Frederic</creatorcontrib><creatorcontrib>Nejat, Arash</creatorcontrib><creatorcontrib>Torres, Lionel</creatorcontrib><creatorcontrib>Mackay, Ken</creatorcontrib><title>Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs</title><title>IEEE access</title><addtitle>Access</addtitle><description>Noises exist in digital circuits can be leveraged as the source of entropy to design true random numbers generators (TRNGs), which is an important primitive component in cryptography and hardware-based security applications. In this paper, we present practical experiments and results of a TRNG implemented on magnetic random-access memory (MRAM) dies, fabricated by the thermally-assisted-switching MRAM (TAS-MRAM) technology. We, first, explain how one can find out a heating voltage value using that writing operations in the TAS-MRAM dies have a stochastic behavior. Then, we propose an improvement based on a feedback loop from being generated random bits. It helps to adjust the founded heating voltage value for writing operation with the aim of reaching the maximum entropy. Finally, we report the results of some post-processing methods, which are usually required in TRNGs to successfully pass the statistical test of NIST SP-800. The results show that one can generate random numbers with a high quality of randomness using the proposed TRNGs besides simple post-processing methods.</description><subject>Circuit design</subject><subject>Control theory</subject><subject>Cryptography</subject><subject>Digital circuits</subject><subject>Digital electronics</subject><subject>Electric potential</subject><subject>Engineering Sciences</subject><subject>Feedback loops</subject><subject>Heating systems</subject><subject>Integrated circuits</subject><subject>magnetic RAM</subject><subject>Magnetic separation</subject><subject>Magnetic tunneling</subject><subject>Maximum entropy</subject><subject>Micro and nanotechnologies</subject><subject>Microelectronics</subject><subject>Numbers</subject><subject>Post-processing</subject><subject>Random access memory</subject><subject>Random numbers</subject><subject>Randomness</subject><subject>Statistical tests</subject><subject>thermally-assisted-switching MRAM</subject><subject>Threshold voltage</subject><subject>True random number generator</subject><subject>Voltage</subject><subject>Writing</subject><issn>2169-3536</issn><issn>2169-3536</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><sourceid>DOA</sourceid><recordid>eNpVkUtvEzEUhUcIJKrSX9CNJZZoUnv8XoYhfUgpoKawtTz2nWaiSZzaTgT_HoepKvDG9vE5n3x1quqS4BkhWF_N23axWs0aTPSs0VgSJd5UZw0Ruqacirf_nN9XFyltcFmqSFyeVc_fo3V5cHZEi197iMMWdjmhsEPXtotFz-DR43xV3z_M79GXARLKAS2OdjyUJ5TXgFY5uLVNBYI-w9oehxBR6NHPMGb7BHUbdjmGcTxxHr7epA_Vu96OCS5e9vPqx_Xisb2tl99u7tr5snaMsVxzB9ICUR2V2DvvBBFSU-x533gFvpeUKs-sxpq7TjvC-sbxvtO4U94Kzuh5dTdxfbAbsy-T2fjbBDuYv0KIT8bG8ukRDFDRCwoKM0GYVUQx2nBLyr1XivmusD5NrLUd_0PdzpdmHOJ2a3CDpZYEH0lxf5zc-xieD5Cy2YRD3JVhTcM4F4QIcXLRyeViSClC_wom2JyKNVOx5lSseSm2pC6n1AAArwklCVWS0T_RW50d</recordid><startdate>2019</startdate><enddate>2019</enddate><creator>Ouattara, Frederic</creator><creator>Nejat, Arash</creator><creator>Torres, Lionel</creator><creator>Mackay, Ken</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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In this paper, we present practical experiments and results of a TRNG implemented on magnetic random-access memory (MRAM) dies, fabricated by the thermally-assisted-switching MRAM (TAS-MRAM) technology. We, first, explain how one can find out a heating voltage value using that writing operations in the TAS-MRAM dies have a stochastic behavior. Then, we propose an improvement based on a feedback loop from being generated random bits. It helps to adjust the founded heating voltage value for writing operation with the aim of reaching the maximum entropy. Finally, we report the results of some post-processing methods, which are usually required in TRNGs to successfully pass the statistical test of NIST SP-800. 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| subjects | Circuit design Control theory Cryptography Digital circuits Digital electronics Electric potential Engineering Sciences Feedback loops Heating systems Integrated circuits magnetic RAM Magnetic separation Magnetic tunneling Maximum entropy Micro and nanotechnologies Microelectronics Numbers Post-processing Random access memory Random numbers Randomness Statistical tests thermally-assisted-switching MRAM Threshold voltage True random number generator Voltage Writing |
| title | Practical Experiments on Fabricated TAS-MRAM Dies to Evaluate the Stochastic Behavior of Voltage-Controlled TRNGs |
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