Sacrificial wafer bonding for planarization after very deep etching
A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a w...
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| Veröffentlicht in: | Journal of microelectromechanical systems 1995-09, Vol.4 (3), p.151-157 |
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| container_end_page | 157 |
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| container_issue | 3 |
| container_start_page | 151 |
| container_title | Journal of microelectromechanical systems |
| container_volume | 4 |
| creator | Spiering, V.L. Berenschot, J.W. Elwenspoek, M. Fluitman, J.H.J. |
| description | A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of polymer bonding followed by dry etching and anodic bonding combined with KOH etching are discussed. The polymer bonding has been applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.< > |
| doi_str_mv | 10.1109/84.465120 |
| format | Article |
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This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of polymer bonding followed by dry etching and anodic bonding combined with KOH etching are discussed. The polymer bonding has been applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.< ></description><identifier>ISSN: 1057-7157</identifier><identifier>EISSN: 1941-0158</identifier><identifier>DOI: 10.1109/84.465120</identifier><identifier>CODEN: JMIYET</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Biomembranes ; Bridges ; Capacitive sensors ; Dry etching ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Planarization ; Polymers ; Resists ; Semiconductor electronics. Microelectronics. Optoelectronics. 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This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of polymer bonding followed by dry etching and anodic bonding combined with KOH etching are discussed. The polymer bonding has been applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.< ></description><subject>Applied sciences</subject><subject>Biomembranes</subject><subject>Bridges</subject><subject>Capacitive sensors</subject><subject>Dry etching</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Planarization</subject><subject>Polymers</subject><subject>Resists</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Spinning</topic><topic>Wafer bonding</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Spiering, V.L.</creatorcontrib><creatorcontrib>Berenschot, J.W.</creatorcontrib><creatorcontrib>Elwenspoek, M.</creatorcontrib><creatorcontrib>Fluitman, J.H.J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Engineering Research Database</collection><jtitle>Journal of microelectromechanical systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Spiering, V.L.</au><au>Berenschot, J.W.</au><au>Elwenspoek, M.</au><au>Fluitman, J.H.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sacrificial wafer bonding for planarization after very deep etching</atitle><jtitle>Journal of microelectromechanical systems</jtitle><stitle>JMEMS</stitle><date>1995-09-01</date><risdate>1995</risdate><volume>4</volume><issue>3</issue><spage>151</spage><epage>157</epage><pages>151-157</pages><issn>1057-7157</issn><eissn>1941-0158</eissn><coden>JMIYET</coden><abstract>A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for resist spinning and layer patterning as well as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a wafer bond step followed by an etch back. Results of polymer bonding followed by dry etching and anodic bonding combined with KOH etching are discussed. The polymer bonding has been applied in a strain based membrane pressure sensor to pattern the strain gauges and to provide electrical connections across a deep corrugation in a thin silicon nitride membrane by metal bridges.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/84.465120</doi><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 1057-7157 |
| ispartof | Journal of microelectromechanical systems, 1995-09, Vol.4 (3), p.151-157 |
| issn | 1057-7157 1941-0158 |
| language | eng |
| recordid | cdi_crossref_primary_10_1109_84_465120 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Biomembranes Bridges Capacitive sensors Dry etching Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Planarization Polymers Resists Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Spinning Wafer bonding |
| title | Sacrificial wafer bonding for planarization after very deep etching |
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