Large area flux transformers and passivation for flip-chip magnetometers
We have fabricated thin-film flux transformers prepared from heteroepitaxially grown, highly c-axis oriented YBa/sub 2/Cu/sub 3/O/sub 7/-SrTiO/sub 3/-YBa/sub 2/Cu/sub 3/O/sub 7/-trilayers. Crossovers and vias as well as complete test coils exhibit critical temperatures around 85 K with critical curr...
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Veröffentlicht in: | IEEE transactions on applied superconductivity 1997-06, Vol.7 (2), p.2768-2771 |
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container_title | IEEE transactions on applied superconductivity |
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creator | Francke, C. Mex, L. Kramer, A. Meyer, B. Muller, J. |
description | We have fabricated thin-film flux transformers prepared from heteroepitaxially grown, highly c-axis oriented YBa/sub 2/Cu/sub 3/O/sub 7/-SrTiO/sub 3/-YBa/sub 2/Cu/sub 3/O/sub 7/-trilayers. Crossovers and vias as well as complete test coils exhibit critical temperatures around 85 K with critical current densities of j/sub c/=1.5/spl times/10/sup 6/ A/cm/sup 2/ at 77 K. AFM and TEM investigations showed that only convex edges enable highly c-axis oriented films on the beveled edges with the CuO-planes aligning themselves parallel to the substrate surface. The fabricated flux transformers yield a gain of more than 43. To protect devices against their environment and prevent oxygen losses we have developed a passivation layer deposited by polymerization of the silicon-organic compound hexamethyldisilazane (HMDS-N) in a plasma enhanced chemical vapor deposition process. The 150 nm thick films exhibit excellent passivation properties without substantial interference with device properties. The films can be used as the isolation and scratch protection between SQUIDs and thin-film flux transformers in flip-chip magnetometers. |
doi_str_mv | 10.1109/77.621811 |
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Crossovers and vias as well as complete test coils exhibit critical temperatures around 85 K with critical current densities of j/sub c/=1.5/spl times/10/sup 6/ A/cm/sup 2/ at 77 K. AFM and TEM investigations showed that only convex edges enable highly c-axis oriented films on the beveled edges with the CuO-planes aligning themselves parallel to the substrate surface. The fabricated flux transformers yield a gain of more than 43. To protect devices against their environment and prevent oxygen losses we have developed a passivation layer deposited by polymerization of the silicon-organic compound hexamethyldisilazane (HMDS-N) in a plasma enhanced chemical vapor deposition process. The 150 nm thick films exhibit excellent passivation properties without substantial interference with device properties. The films can be used as the isolation and scratch protection between SQUIDs and thin-film flux transformers in flip-chip magnetometers.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/77.621811</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Coils ; Critical current density ; Electronics ; Exact sciences and technology ; Passivation ; Plasma temperature ; Polymers ; Protection ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Substrates ; Superconducting devices ; Testing ; Transformers ; Transistors</subject><ispartof>IEEE transactions on applied superconductivity, 1997-06, Vol.7 (2), p.2768-2771</ispartof><rights>1997 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c306t-b374dfa2a4736529cc5f727c3adf48e46bc270c8f03a7cc9fc590e3f7eda32503</citedby><cites>FETCH-LOGICAL-c306t-b374dfa2a4736529cc5f727c3adf48e46bc270c8f03a7cc9fc590e3f7eda32503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/621811$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/621811$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=2808998$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Francke, C.</creatorcontrib><creatorcontrib>Mex, L.</creatorcontrib><creatorcontrib>Kramer, A.</creatorcontrib><creatorcontrib>Meyer, B.</creatorcontrib><creatorcontrib>Muller, J.</creatorcontrib><title>Large area flux transformers and passivation for flip-chip magnetometers</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>We have fabricated thin-film flux transformers prepared from heteroepitaxially grown, highly c-axis oriented YBa/sub 2/Cu/sub 3/O/sub 7/-SrTiO/sub 3/-YBa/sub 2/Cu/sub 3/O/sub 7/-trilayers. Crossovers and vias as well as complete test coils exhibit critical temperatures around 85 K with critical current densities of j/sub c/=1.5/spl times/10/sup 6/ A/cm/sup 2/ at 77 K. AFM and TEM investigations showed that only convex edges enable highly c-axis oriented films on the beveled edges with the CuO-planes aligning themselves parallel to the substrate surface. The fabricated flux transformers yield a gain of more than 43. To protect devices against their environment and prevent oxygen losses we have developed a passivation layer deposited by polymerization of the silicon-organic compound hexamethyldisilazane (HMDS-N) in a plasma enhanced chemical vapor deposition process. The 150 nm thick films exhibit excellent passivation properties without substantial interference with device properties. The films can be used as the isolation and scratch protection between SQUIDs and thin-film flux transformers in flip-chip magnetometers.</description><subject>Applied sciences</subject><subject>Coils</subject><subject>Critical current density</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Passivation</subject><subject>Plasma temperature</subject><subject>Polymers</subject><subject>Protection</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Substrates</subject><subject>Superconducting devices</subject><subject>Testing</subject><subject>Transformers</subject><subject>Transistors</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo90D1PwzAQBmALgUQpDKxMGRASQ4o_4tgZUQUUqRILzNbVORejfGGnCP49rlJ18sn33Du8hFwzumCMVg9KLUrONGMnZMak1DmXTJ6mmUqWa87FObmI8YtSVuhCzshqDWGLGQSEzDW732wM0EXXhxZDzKCrswFi9D8w-r7L0n9Sfsjtpx-yFrYdjn2LY7KX5MxBE_Hq8M7Jx_PT-3KVr99eXpeP69wKWo75RqiidsChUKKUvLJWOsWVFVC7QmNRbixX1GpHBShrK2dlRVE4hTUILqmYk7spdwj99w7jaFofLTYNdNjvouFaSMrLPbyfoA19jAGdGYJvIfwZRs2-K6OUmbpK9vYQCtFC41IH1sfjAddUV5VO7GZiHhGP20PGP7AscV4</recordid><startdate>19970601</startdate><enddate>19970601</enddate><creator>Francke, C.</creator><creator>Mex, L.</creator><creator>Kramer, A.</creator><creator>Meyer, B.</creator><creator>Muller, J.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19970601</creationdate><title>Large area flux transformers and passivation for flip-chip magnetometers</title><author>Francke, C. ; Mex, L. ; Kramer, A. ; Meyer, B. ; Muller, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c306t-b374dfa2a4736529cc5f727c3adf48e46bc270c8f03a7cc9fc590e3f7eda32503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Applied sciences</topic><topic>Coils</topic><topic>Critical current density</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Passivation</topic><topic>Plasma temperature</topic><topic>Polymers</topic><topic>Protection</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Substrates</topic><topic>Superconducting devices</topic><topic>Testing</topic><topic>Transformers</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Francke, C.</creatorcontrib><creatorcontrib>Mex, L.</creatorcontrib><creatorcontrib>Kramer, A.</creatorcontrib><creatorcontrib>Meyer, B.</creatorcontrib><creatorcontrib>Muller, J.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Francke, C.</au><au>Mex, L.</au><au>Kramer, A.</au><au>Meyer, B.</au><au>Muller, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Large area flux transformers and passivation for flip-chip magnetometers</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>1997-06-01</date><risdate>1997</risdate><volume>7</volume><issue>2</issue><spage>2768</spage><epage>2771</epage><pages>2768-2771</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>We have fabricated thin-film flux transformers prepared from heteroepitaxially grown, highly c-axis oriented YBa/sub 2/Cu/sub 3/O/sub 7/-SrTiO/sub 3/-YBa/sub 2/Cu/sub 3/O/sub 7/-trilayers. Crossovers and vias as well as complete test coils exhibit critical temperatures around 85 K with critical current densities of j/sub c/=1.5/spl times/10/sup 6/ A/cm/sup 2/ at 77 K. AFM and TEM investigations showed that only convex edges enable highly c-axis oriented films on the beveled edges with the CuO-planes aligning themselves parallel to the substrate surface. The fabricated flux transformers yield a gain of more than 43. To protect devices against their environment and prevent oxygen losses we have developed a passivation layer deposited by polymerization of the silicon-organic compound hexamethyldisilazane (HMDS-N) in a plasma enhanced chemical vapor deposition process. The 150 nm thick films exhibit excellent passivation properties without substantial interference with device properties. The films can be used as the isolation and scratch protection between SQUIDs and thin-film flux transformers in flip-chip magnetometers.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/77.621811</doi><tpages>4</tpages></addata></record> |
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subjects | Applied sciences Coils Critical current density Electronics Exact sciences and technology Passivation Plasma temperature Polymers Protection Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates Superconducting devices Testing Transformers Transistors |
title | Large area flux transformers and passivation for flip-chip magnetometers |
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