High-efficiency light-emitting diodes at /spl ap/1.3 /spl mu/m using InAs-InGaAs quantum dots

Light-emitting diodes (LEDs) based on long-wavelength, self-assembled InAs-InGaAs quantum dots (QDs) are demonstrated and characterized. The LEDs consist of a single layer of QDs positioned at /spl lambda//2 from a top gold mirror to enhance the extraction efficiency. The external quantum efficiency...

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Veröffentlicht in:	IEEE photonics technology letters 2000-12, Vol.12 (12), p.1601-1603
Hauptverfasser:	Fiore, A., Oesterle, U., Stanley, R.P., Ilegems, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Gallium arsenide Indium gallium arsenide Light emitting diodes Mirrors Quantum dot lasers Quantum dots Substrates Surface emitting lasers Temperature US Department of Transportation
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