Waveguide microcavity based on photonic microstructures

A waveguide based microcavity exhibiting a quality factor Q/spl ap/2500 has been realized by incorporating a /spl lambda//4 phase shift into a 1-D photonic microstructure. The microstructure has an overall length of 3 μm, consists of a deeply etched grating with very narrow (75 nm) air-gaps and exhi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE photonics technology letters 1997-02, Vol.9 (2), p.176-178
Hauptverfasser: Krauss, T.F., Vogele, B., Stanley, C.R., De La Rue, R.M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 178
container_issue 2
container_start_page 176
container_title IEEE photonics technology letters
container_volume 9
creator Krauss, T.F.
Vogele, B.
Stanley, C.R.
De La Rue, R.M.
description A waveguide based microcavity exhibiting a quality factor Q/spl ap/2500 has been realized by incorporating a /spl lambda//4 phase shift into a 1-D photonic microstructure. The microstructure has an overall length of 3 μm, consists of a deeply etched grating with very narrow (75 nm) air-gaps and exhibits a third-order stop band in the 800-900 nm wavelength regime. A comparison between measurement and simulation suggests that there is a thin (approximately 18 nm) skin of oxidized material at the etched semiconductor-air interfaces.
doi_str_mv 10.1109/68.553082
format Article
fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_crossref_primary_10_1109_68_553082</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>553082</ieee_id><sourcerecordid>28754750</sourcerecordid><originalsourceid>FETCH-LOGICAL-c277t-dc827f87190995cd0f83a7611c943d147da3c407b9790fe7f963adc3616110a33</originalsourceid><addsrcrecordid>eNo90E1LAzEQBuAgCtbqwaunPQkets5skp3kKMUvKHhRPIY0yWqk7dZkt9B_75YtnuaFeRiGl7FrhBki6PtazaTkoKoTNkEtsAQkcTpkGDIil-fsIucfABSSiwmjT7sLX330oVhHl1pnd7HbF0ubgy_aTbH9brt2E924zV3qXdenkC_ZWWNXOVwd55R9PD2-z1_Kxdvz6_xhUbqKqCu9UxU1ilCD1tJ5aBS3VCM6LbhHQd5yJ4CWmjQ0gRpdc-sdr3EwYDmfstvx7ja1v33InVnH7MJqZTeh7bOpFElBEgZ4N8LDmzmFxmxTXNu0NwjmUI2plRmrGezNaGMI4d8dl382XV2j</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28754750</pqid></control><display><type>article</type><title>Waveguide microcavity based on photonic microstructures</title><source>IEEE/IET Electronic Library (IEL)</source><creator>Krauss, T.F. ; Vogele, B. ; Stanley, C.R. ; De La Rue, R.M.</creator><creatorcontrib>Krauss, T.F. ; Vogele, B. ; Stanley, C.R. ; De La Rue, R.M.</creatorcontrib><description>A waveguide based microcavity exhibiting a quality factor Q/spl ap/2500 has been realized by incorporating a /spl lambda//4 phase shift into a 1-D photonic microstructure. The microstructure has an overall length of 3 μm, consists of a deeply etched grating with very narrow (75 nm) air-gaps and exhibits a third-order stop band in the 800-900 nm wavelength regime. A comparison between measurement and simulation suggests that there is a thin (approximately 18 nm) skin of oxidized material at the etched semiconductor-air interfaces.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.553082</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>IEEE</publisher><subject>Etching ; Gratings ; Microcavities ; Microstructure ; Optical materials ; Optical waveguides ; Semiconductor materials ; Semiconductor waveguides ; Surface waves ; Vertical cavity surface emitting lasers</subject><ispartof>IEEE photonics technology letters, 1997-02, Vol.9 (2), p.176-178</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c277t-dc827f87190995cd0f83a7611c943d147da3c407b9790fe7f963adc3616110a33</citedby><cites>FETCH-LOGICAL-c277t-dc827f87190995cd0f83a7611c943d147da3c407b9790fe7f963adc3616110a33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/553082$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27915,27916,54749</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/553082$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Krauss, T.F.</creatorcontrib><creatorcontrib>Vogele, B.</creatorcontrib><creatorcontrib>Stanley, C.R.</creatorcontrib><creatorcontrib>De La Rue, R.M.</creatorcontrib><title>Waveguide microcavity based on photonic microstructures</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>A waveguide based microcavity exhibiting a quality factor Q/spl ap/2500 has been realized by incorporating a /spl lambda//4 phase shift into a 1-D photonic microstructure. The microstructure has an overall length of 3 μm, consists of a deeply etched grating with very narrow (75 nm) air-gaps and exhibits a third-order stop band in the 800-900 nm wavelength regime. A comparison between measurement and simulation suggests that there is a thin (approximately 18 nm) skin of oxidized material at the etched semiconductor-air interfaces.</description><subject>Etching</subject><subject>Gratings</subject><subject>Microcavities</subject><subject>Microstructure</subject><subject>Optical materials</subject><subject>Optical waveguides</subject><subject>Semiconductor materials</subject><subject>Semiconductor waveguides</subject><subject>Surface waves</subject><subject>Vertical cavity surface emitting lasers</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNo90E1LAzEQBuAgCtbqwaunPQkets5skp3kKMUvKHhRPIY0yWqk7dZkt9B_75YtnuaFeRiGl7FrhBki6PtazaTkoKoTNkEtsAQkcTpkGDIil-fsIucfABSSiwmjT7sLX330oVhHl1pnd7HbF0ubgy_aTbH9brt2E924zV3qXdenkC_ZWWNXOVwd55R9PD2-z1_Kxdvz6_xhUbqKqCu9UxU1ilCD1tJ5aBS3VCM6LbhHQd5yJ4CWmjQ0gRpdc-sdr3EwYDmfstvx7ja1v33InVnH7MJqZTeh7bOpFElBEgZ4N8LDmzmFxmxTXNu0NwjmUI2plRmrGezNaGMI4d8dl382XV2j</recordid><startdate>199702</startdate><enddate>199702</enddate><creator>Krauss, T.F.</creator><creator>Vogele, B.</creator><creator>Stanley, C.R.</creator><creator>De La Rue, R.M.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>199702</creationdate><title>Waveguide microcavity based on photonic microstructures</title><author>Krauss, T.F. ; Vogele, B. ; Stanley, C.R. ; De La Rue, R.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c277t-dc827f87190995cd0f83a7611c943d147da3c407b9790fe7f963adc3616110a33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Etching</topic><topic>Gratings</topic><topic>Microcavities</topic><topic>Microstructure</topic><topic>Optical materials</topic><topic>Optical waveguides</topic><topic>Semiconductor materials</topic><topic>Semiconductor waveguides</topic><topic>Surface waves</topic><topic>Vertical cavity surface emitting lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Krauss, T.F.</creatorcontrib><creatorcontrib>Vogele, B.</creatorcontrib><creatorcontrib>Stanley, C.R.</creatorcontrib><creatorcontrib>De La Rue, R.M.</creatorcontrib><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Krauss, T.F.</au><au>Vogele, B.</au><au>Stanley, C.R.</au><au>De La Rue, R.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Waveguide microcavity based on photonic microstructures</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>1997-02</date><risdate>1997</risdate><volume>9</volume><issue>2</issue><spage>176</spage><epage>178</epage><pages>176-178</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>A waveguide based microcavity exhibiting a quality factor Q/spl ap/2500 has been realized by incorporating a /spl lambda//4 phase shift into a 1-D photonic microstructure. The microstructure has an overall length of 3 μm, consists of a deeply etched grating with very narrow (75 nm) air-gaps and exhibits a third-order stop band in the 800-900 nm wavelength regime. A comparison between measurement and simulation suggests that there is a thin (approximately 18 nm) skin of oxidized material at the etched semiconductor-air interfaces.</abstract><pub>IEEE</pub><doi>10.1109/68.553082</doi><tpages>3</tpages></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 1041-1135
ispartof IEEE photonics technology letters, 1997-02, Vol.9 (2), p.176-178
issn 1041-1135
1941-0174
language eng
recordid cdi_crossref_primary_10_1109_68_553082
source IEEE/IET Electronic Library (IEL)
subjects Etching
Gratings
Microcavities
Microstructure
Optical materials
Optical waveguides
Semiconductor materials
Semiconductor waveguides
Surface waves
Vertical cavity surface emitting lasers
title Waveguide microcavity based on photonic microstructures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T19%3A04%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Waveguide%20microcavity%20based%20on%20photonic%20microstructures&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Krauss,%20T.F.&rft.date=1997-02&rft.volume=9&rft.issue=2&rft.spage=176&rft.epage=178&rft.pages=176-178&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/68.553082&rft_dat=%3Cproquest_RIE%3E28754750%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28754750&rft_id=info:pmid/&rft_ieee_id=553082&rfr_iscdi=true