Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

The deposition of silicon carbide thin films and the associated technologies of impurity incorporation, etching, surface chemistry, and electrical contacts for fabrication of solid-state devices capable of operation at temperatures to 925 K are addressed. The results of several research programs in...

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Veröffentlicht in:	Proceedings of the IEEE 1991-05, Vol.79 (5), p.677-701
Hauptverfasser:	Davis, R.F., Kelner, G., Shur, M., Palmour, J.W., Edmond, J.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical technology Chemistry Electronics Etching Exact sciences and technology Impurities Microelectronic fabrication (materials and surfaces technology) Microelectronics Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor thin films Silicon carbide Sputtering Thin film devices
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