Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress

The importance of low-field mobility to the performance of deep-sub-100-nm bulk MOSFETs is not well understood. In this work, we investigate experimentally how effective electron mobility at low lateral electric fields relates to velocity in the MOSFET saturation regime, where lateral fields in the...

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Veröffentlicht in:	IEEE electron device letters 2001-12, Vol.22 (12), p.591-593
Hauptverfasser:	Lochtefeld, A., Antoniadis, D.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitive sensors Channels CMOS technology Devices Doping Electric fields Electrical resistance measurement Electron mobility MOS devices MOSFETs Saturation Silicon on insulator technology Strain measurement Stresses Tensile stress
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