Improving the RF performance of 0.18 /spl mu/m CMOS with deep n-well implantation

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Veröffentlicht in:	IEEE electron device letters 2001-10, Vol.22 (10), p.481-483
Hauptverfasser:	Jiong-Guang Su, Heng-Ming Hsu, Shyh-Chyi Wong, Chun-Yen Chang, Tiao-Yuan Huang, Jack Yuan-Chen Sun
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container_end_page	483
container_issue	10
container_start_page	481
container_title	IEEE electron device letters
container_volume	22
creator	Jiong-Guang Su Heng-Ming Hsu Shyh-Chyi Wong Chun-Yen Chang Tiao-Yuan Huang Jack Yuan-Chen Sun
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doi_str_mv	10.1109/55.954918
format	Article
fullrecord	<record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1109_55_954918</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1109_55_954918</sourcerecordid><originalsourceid>FETCH-LOGICAL-c748-5ac6476e4dd50259deb01bbf94dc0e76480e2663c9aa60d9928ab57f459697ba3</originalsourceid><addsrcrecordid>eNot0L1OwzAUQGELgUQoDLzBXRnSXCe-djyiikKlogroHjmOTYPyJztQ8faAynS2bziM3XJcco46I1pqEpqXZyzhRGWKJItzlqASPC04ykt2FeMHIhdCiYS9bPopjF_t8A7zwcHrGiYX_Bh6M1gHo4dft4QsTh30n1kPq-fdGxzb-QCNcxMM6dF1HbT91JlhNnM7Dtfswpsuupv_Lth-_bBfPaXb3eNmdb9NrRJlSsZKoaQTTUOYk25cjbyuvRaNRaekKNHlUhZWGyOx0TovTU3KC9JSq9oUC3Z3Ym0YYwzOV1NoexO-K47V34qKqDqtKH4AQ6ZO3A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Improving the RF performance of 0.18 /spl mu/m CMOS with deep n-well implantation</title><source>IEEE Electronic Library (IEL)</source><creator>Jiong-Guang Su ; Heng-Ming Hsu ; Shyh-Chyi Wong ; Chun-Yen Chang ; Tiao-Yuan Huang ; Jack Yuan-Chen Sun</creator><creatorcontrib>Jiong-Guang Su ; Heng-Ming Hsu ; Shyh-Chyi Wong ; Chun-Yen Chang ; Tiao-Yuan Huang ; Jack Yuan-Chen Sun</creatorcontrib><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.954918</identifier><language>eng</language><ispartof>IEEE electron device letters, 2001-10, Vol.22 (10), p.481-483</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c748-5ac6476e4dd50259deb01bbf94dc0e76480e2663c9aa60d9928ab57f459697ba3</citedby><cites>FETCH-LOGICAL-c748-5ac6476e4dd50259deb01bbf94dc0e76480e2663c9aa60d9928ab57f459697ba3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Jiong-Guang Su</creatorcontrib><creatorcontrib>Heng-Ming Hsu</creatorcontrib><creatorcontrib>Shyh-Chyi Wong</creatorcontrib><creatorcontrib>Chun-Yen Chang</creatorcontrib><creatorcontrib>Tiao-Yuan Huang</creatorcontrib><creatorcontrib>Jack Yuan-Chen Sun</creatorcontrib><title>Improving the RF performance of 0.18 /spl mu/m CMOS with deep n-well implantation</title><title>IEEE electron device letters</title><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNot0L1OwzAUQGELgUQoDLzBXRnSXCe-djyiikKlogroHjmOTYPyJztQ8faAynS2bziM3XJcco46I1pqEpqXZyzhRGWKJItzlqASPC04ykt2FeMHIhdCiYS9bPopjF_t8A7zwcHrGiYX_Bh6M1gHo4dft4QsTh30n1kPq-fdGxzb-QCNcxMM6dF1HbT91JlhNnM7Dtfswpsuupv_Lth-_bBfPaXb3eNmdb9NrRJlSsZKoaQTTUOYk25cjbyuvRaNRaekKNHlUhZWGyOx0TovTU3KC9JSq9oUC3Z3Ym0YYwzOV1NoexO-K47V34qKqDqtKH4AQ6ZO3A</recordid><startdate>200110</startdate><enddate>200110</enddate><creator>Jiong-Guang Su</creator><creator>Heng-Ming Hsu</creator><creator>Shyh-Chyi Wong</creator><creator>Chun-Yen Chang</creator><creator>Tiao-Yuan Huang</creator><creator>Jack Yuan-Chen Sun</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200110</creationdate><title>Improving the RF performance of 0.18 /spl mu/m CMOS with deep n-well implantation</title><author>Jiong-Guang Su ; Heng-Ming Hsu ; Shyh-Chyi Wong ; Chun-Yen Chang ; Tiao-Yuan Huang ; Jack Yuan-Chen Sun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c748-5ac6476e4dd50259deb01bbf94dc0e76480e2663c9aa60d9928ab57f459697ba3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jiong-Guang Su</creatorcontrib><creatorcontrib>Heng-Ming Hsu</creatorcontrib><creatorcontrib>Shyh-Chyi Wong</creatorcontrib><creatorcontrib>Chun-Yen Chang</creatorcontrib><creatorcontrib>Tiao-Yuan Huang</creatorcontrib><creatorcontrib>Jack Yuan-Chen Sun</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jiong-Guang Su</au><au>Heng-Ming Hsu</au><au>Shyh-Chyi Wong</au><au>Chun-Yen Chang</au><au>Tiao-Yuan Huang</au><au>Jack Yuan-Chen Sun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improving the RF performance of 0.18 /spl mu/m CMOS with deep n-well implantation</atitle><jtitle>IEEE electron device letters</jtitle><date>2001-10</date><risdate>2001</risdate><volume>22</volume><issue>10</issue><spage>481</spage><epage>483</epage><pages>481-483</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><doi>10.1109/55.954918</doi><tpages>3</tpages></addata></record>
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issn	0741-3106 1558-0563
language	eng
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source	IEEE Electronic Library (IEL)
title	Improving the RF performance of 0.18 /spl mu/m CMOS with deep n-well implantation
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T13%3A52%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improving%20the%20RF%20performance%20of%200.18%20/spl%20mu/m%20CMOS%20with%20deep%20n-well%20implantation&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Jiong-Guang%20Su&rft.date=2001-10&rft.volume=22&rft.issue=10&rft.spage=481&rft.epage=483&rft.pages=481-483&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/55.954918&rft_dat=%3Ccrossref%3E10_1109_55_954918%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true