A multiple-state memory cell based on the resonant tunneling diode
The device consists primarily of several molecular-beam-epitaxy (MBE-) grown GaAs/(AlGa)As resonant tunneling diodes connected in parallel. This device exhibits multiple peaks in the I-V characteristic. When a load resistor is connected, the circuit can be operated in a multiple stable mode. With th...
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| Veröffentlicht in: | IEEE electron device letters 1988-05, Vol.9 (5), p.200-202 |
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| container_title | IEEE electron device letters |
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| creator | Soderstrom, J. Andersson, T.G. |
| description | The device consists primarily of several molecular-beam-epitaxy (MBE-) grown GaAs/(AlGa)As resonant tunneling diodes connected in parallel. This device exhibits multiple peaks in the I-V characteristic. When a load resistor is connected, the circuit can be operated in a multiple stable mode. With this concept, implementation of three-state and four-state memory cells are made. In the three-state case the operating points at voltages V/sub 0/=0.27 V, V/sub 1/=0.42 V, and V/sub 2/=0.53 V represent the logic levels 0, 1, and 2. Similarly for the four-state memory cell the logic levels voltages are V/sub 0/=0.35 V, V/sub 1/=0.42 V, V/sub 2/=0.54 V, and V/sub 3/=0.59 V. A suggestion of an integrated device structure using this concept is also presented.< > |
| doi_str_mv | 10.1109/55.689 |
| format | Article |
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This device exhibits multiple peaks in the I-V characteristic. When a load resistor is connected, the circuit can be operated in a multiple stable mode. With this concept, implementation of three-state and four-state memory cells are made. In the three-state case the operating points at voltages V/sub 0/=0.27 V, V/sub 1/=0.42 V, and V/sub 2/=0.53 V represent the logic levels 0, 1, and 2. Similarly for the four-state memory cell the logic levels voltages are V/sub 0/=0.35 V, V/sub 1/=0.42 V, V/sub 2/=0.54 V, and V/sub 3/=0.59 V. A suggestion of an integrated device structure using this concept is also presented.< ></description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.689</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Diodes ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Logic circuits ; Logic devices ; Miscellaneous ; Molecular beam epitaxial growth ; Resistors ; Resonance ; Resonant tunneling devices ; Stationary state ; Storage and reproduction of information ; Voltage</subject><ispartof>IEEE electron device letters, 1988-05, Vol.9 (5), p.200-202</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-aec444eafcfb7c1e785476c790fbe4223cf9721e37585e1a8e573f55b6b45bf03</citedby><cites>FETCH-LOGICAL-c359t-aec444eafcfb7c1e785476c790fbe4223cf9721e37585e1a8e573f55b6b45bf03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/689$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/689$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7257867$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Soderstrom, J.</creatorcontrib><creatorcontrib>Andersson, T.G.</creatorcontrib><title>A multiple-state memory cell based on the resonant tunneling diode</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The device consists primarily of several molecular-beam-epitaxy (MBE-) grown GaAs/(AlGa)As resonant tunneling diodes connected in parallel. This device exhibits multiple peaks in the I-V characteristic. When a load resistor is connected, the circuit can be operated in a multiple stable mode. With this concept, implementation of three-state and four-state memory cells are made. In the three-state case the operating points at voltages V/sub 0/=0.27 V, V/sub 1/=0.42 V, and V/sub 2/=0.53 V represent the logic levels 0, 1, and 2. Similarly for the four-state memory cell the logic levels voltages are V/sub 0/=0.35 V, V/sub 1/=0.42 V, V/sub 2/=0.54 V, and V/sub 3/=0.59 V. A suggestion of an integrated device structure using this concept is also presented.< ></description><subject>Applied sciences</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Logic circuits</subject><subject>Logic devices</subject><subject>Miscellaneous</subject><subject>Molecular beam epitaxial growth</subject><subject>Resistors</subject><subject>Resonance</subject><subject>Resonant tunneling devices</subject><subject>Stationary state</subject><subject>Storage and reproduction of information</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNqN0L1PwzAQBXALgUQpsLJ6QGwpduyznbFUfEmVWGCOHPcMQYlTbGfof08rqjLCdMP99PT0CLnkbMY5q24BZspUR2TCAUzBQIljMmFa8kJwpk7JWUqfjHEptZyQuzntxy636w6LlG1G2mM_xA112HW0sQlXdAg0fyCNmIZgQ6Z5DAG7NrzTVTus8JyceNslvNjfKXl7uH9dPBXLl8fnxXxZOAFVLiw6KSVa73yjHUdtQGrldMV8g7IshfOVLjkKDQaQW4OghQdoVCOh8UxMyc1P7joOXyOmXPdt2tW0AYcx1aURlVQl_A1lBcIo-R8o5bbFL3RxSCmir9ex7W3c1JzVu9FrgHo7-hZe7xNtcrbz0QbXpoPWJWij9JZd_bAWEQ_fXcA3P2iHbA</recordid><startdate>19880501</startdate><enddate>19880501</enddate><creator>Soderstrom, J.</creator><creator>Andersson, T.G.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>H8D</scope></search><sort><creationdate>19880501</creationdate><title>A multiple-state memory cell based on the resonant tunneling diode</title><author>Soderstrom, J. ; Andersson, T.G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-aec444eafcfb7c1e785476c790fbe4223cf9721e37585e1a8e573f55b6b45bf03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Applied sciences</topic><topic>Diodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Logic circuits</topic><topic>Logic devices</topic><topic>Miscellaneous</topic><topic>Molecular beam epitaxial growth</topic><topic>Resistors</topic><topic>Resonance</topic><topic>Resonant tunneling devices</topic><topic>Stationary state</topic><topic>Storage and reproduction of information</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Soderstrom, J.</creatorcontrib><creatorcontrib>Andersson, T.G.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aerospace Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Soderstrom, J.</au><au>Andersson, T.G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A multiple-state memory cell based on the resonant tunneling diode</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1988-05-01</date><risdate>1988</risdate><volume>9</volume><issue>5</issue><spage>200</spage><epage>202</epage><pages>200-202</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The device consists primarily of several molecular-beam-epitaxy (MBE-) grown GaAs/(AlGa)As resonant tunneling diodes connected in parallel. This device exhibits multiple peaks in the I-V characteristic. When a load resistor is connected, the circuit can be operated in a multiple stable mode. With this concept, implementation of three-state and four-state memory cells are made. In the three-state case the operating points at voltages V/sub 0/=0.27 V, V/sub 1/=0.42 V, and V/sub 2/=0.53 V represent the logic levels 0, 1, and 2. Similarly for the four-state memory cell the logic levels voltages are V/sub 0/=0.35 V, V/sub 1/=0.42 V, V/sub 2/=0.54 V, and V/sub 3/=0.59 V. A suggestion of an integrated device structure using this concept is also presented.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/55.689</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1988-05, Vol.9 (5), p.200-202 |
| issn | 0741-3106 1558-0563 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Diodes Electronics Exact sciences and technology Gallium arsenide Logic circuits Logic devices Miscellaneous Molecular beam epitaxial growth Resistors Resonance Resonant tunneling devices Stationary state Storage and reproduction of information Voltage |
| title | A multiple-state memory cell based on the resonant tunneling diode |
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