A submicrometer high-performance bipolar technology

The description of a submicrometer self-aligned bipolar technology developed to minimize the device topography and to provide shallow profiles for high-performance (ECL) emitter-coupled logic applications is presented. The technology features 0.8- mu m design rules, planar beakless field oxide, poly...

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Veröffentlicht in:	IEEE electron device letters 1989-08, Vol.10 (8), p.364-366
Hauptverfasser:	Chen, T.-C., Toh, K.Y., Cressler, J.D., Warnock, J., Lu, P.-F., Tang, D.D., Li, G.P., Chuang, C.-T., Ning, T.H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Circuits Clocks Delay Design. Technologies. Operation analysis. Testing Electric breakdown Electric resistance Electronics Exact sciences and technology Frequency conversion Integrated circuits Isolation technology Rapid thermal annealing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Surfaces
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